 | | MT48LC16M8A2P-6A:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,260 | |
 | | MT48LC16M8A2P-6A:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 242 | |
 | | MT48LC16M8A2P-75 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 894 | |
 | | MT48LC16M8A2P-75:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 818 | |
 | | MT48LC16M8A2P-75:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 487 | |
 | | MT48LC16M8A2P-7E:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 867 | |
 | | MT48LC16M8A2P-7E:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,542 | |
 | | MT48LC16M8A2P-7E:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 474 | |
 | | MT48LC16M8A2P-7E:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 100 | |
 | | MT48LC16M8A2TG-75 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 426 | |
 | | MT48LC16M8A2TG-75:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 153 | |
 | | MT48LC16M8A2TG-7E:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,480 | |
 | | MT48LC16M8A2TG-7E:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,316 | |
| N/A | | MT48LC2M32B2B5-6A AAT:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 12 ns | 1,146 | |
| N/A | | MT48LC2M32B2B5-6A AAT:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 12 ns | 1,528 | |
| N/A | | MT48LC2M32B2B5-6A AIT:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 12 ns | 1,919 | |
| N/A | | MT48LC2M32B2B5-6A AIT:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 12 ns | 1,188 | |
| N/A | | MT48LC2M32B2B5-6A:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 12 ns | 1,067 | |
| N/A | | MT48LC2M32B2B5-6A:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 12 ns | 1,381 | |
 | | MT48LC2M32B2B5-7 IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 14 ns | 643 | |