 | | MT48LC2M32B2P-7 IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 892 | |
 | | MT48LC2M32B2P-7 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 561 | |
 | | MT48LC2M32B2P-7:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 354 | |
 | | MT48LC2M32B2P-7:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 969 | |
 | | MT48LC2M32B2TG-5:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 449 | |
 | | MT48LC2M32B2TG-55:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,172 | |
 | | MT48LC2M32B2TG-55:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 443 | |
 | | MT48LC2M32B2TG-6 IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 431 | |
 | | MT48LC2M32B2TG-6 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 189 | |
 | | MT48LC2M32B2TG-6:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,619 | |
 | | MT48LC2M32B2TG-6A IT:J | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 432 | |
 | | MT48LC2M32B2TG-6A IT:JTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 397 | |
 | | MT48LC2M32B2TG-6A:J | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 524 | |
 | | MT48LC2M32B2TG-7 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 977 | |
 | | MT48LC2M32B2TG-7:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 893 | |
 | | MT48LC32M16A2P-75 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 13 | |
 | | MT48LC32M16A2P-75 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 659 | |
 | | MT48LC32M16A2P-75 L:C | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,345 | |
 | | MT48LC32M16A2P-75 L:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,144 | |
 | | MT48LC32M16A2P-75:C | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,191 | |