 | | MT48LC32M8A2P-75 L:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 224 | |
 | | MT48LC32M8A2P-75:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,105 | |
 | | MT48LC32M8A2P-75:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 361 | |
 | | MT48LC32M8A2P-7E:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 895 | |
 | | MT48LC32M8A2P-7E:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 535 | |
 | | MT48LC32M8A2P-7E:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,880 | |
 | | MT48LC32M8A2P-7E:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 471 | |
 | | MT48LC32M8A2TG-75 IT:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 791 | |
 | | MT48LC32M8A2TG-75 IT:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 267 | |
 | | MT48LC32M8A2TG-75:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 20 | |
 | | MT48LC32M8A2TG-7E:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 961 | |
| N/A | | MT48LC4M16A2B4-6A IT:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 12 ns | 581 | |
| N/A | | MT48LC4M16A2B4-6A IT:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 12 ns | 705 | |
| N/A | | MT48LC4M16A2B4-6A:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 12 ns | 365 | |
| N/A | | MT48LC4M16A2B4-6A:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 12 ns | 1,432 | |
 | | MT48LC4M16A2B4-75 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PARALLEL 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 15 ns | 1,316 | |
 | | MT48LC4M16A2B4-7E:G TR | Micron Technology Inc. | IC DRAM 64MBIT PARALLEL 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 14 ns | 122 | |
| N/A | | MT48LC4M16A2B4-7E:J | Micron Technology Inc. | IC DRAM 64MBIT PARALLEL 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 14 ns | 39 | |
| N/A | | MT48LC4M16A2B4-7E:J TR | Micron Technology Inc. | IC DRAM 64MBIT PARALLEL 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 14 ns | 876 | |
 | | MT48LC4M16A2F4-75:G TR | Micron Technology Inc. | IC DRAM 64MBIT PARALLEL 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 15 ns | 511 | |