 | | MT48LC4M16A2P-7E IT:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 860 | |
 | | MT48LC4M16A2P-7E:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 746 | |
 | | MT48LC4M16A2P-7E:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 356 | |
 | | MT48LC4M16A2P-7E:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 857 | |
 | | MT48LC4M16A2P-7E:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 692 | |
 | | MT48LC4M16A2TG-6:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 237 | |
 | | MT48LC4M16A2TG-6:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 807 | |
 | | MT48LC4M16A2TG-75 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 494 | |
 | | MT48LC4M16A2TG-75 L:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 581 | |
 | | MT48LC4M16A2TG-75 L:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 66 | |
 | | MT48LC4M16A2TG-75:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 268 | |
 | | MT48LC4M16A2TG-7E IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 108 | |
 | | MT48LC4M16A2TG-7E IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,283 | |
 | | MT48LC4M16A2TG-7E:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 452 | |
 | | MT48LC4M32B2B5-6:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,308 | |
 | | MT48LC4M32B2B5-6:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 438 | |
 | | MT48LC4M32B2B5-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 780 | |
 | | MT48LC4M32B2B5-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,197 | |
| N/A | | MT48LC4M32B2B5-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 699 | |
| N/A | | MT48LC4M32B2B5-6A IT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 685 | |