 | | MT48LC4M32B2B5-6A:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 370 | |
 | | MT48LC4M32B2B5-6A:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,677 | |
 | | MT48LC4M32B2B5-7 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 14 ns | 1,679 | |
 | | MT48LC4M32B2B5-7 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 14 ns | 1,622 | |
 | | MT48LC4M32B2B5-7:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 14 ns | 509 | |
 | | MT48LC4M32B2B5-7:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 14 ns | 18 | |
 | | MT48LC4M32B2F5-6:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,198 | |
 | | MT48LC4M32B2F5-6:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 52 | |
 | | MT48LC4M32B2F5-7 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 14 ns | 1,606 | |
 | | MT48LC4M32B2F5-7:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 90VFBGA | DRAM Memory | 90-VFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 14 ns | 563 | |
 | | MT48LC4M32B2P-6 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 100 | |
 | | MT48LC4M32B2P-6:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 196 | |
 | | MT48LC4M32B2P-6:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 512 | |
 | | MT48LC4M32B2P-6A AAT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,708 | |
 | | MT48LC4M32B2P-6A AAT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 234 | |
 | | MT48LC4M32B2P-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,161 | |
 | | MT48LC4M32B2P-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 110 | |
 | | MT48LC4M32B2P-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,333 | |
 | | MT48LC4M32B2P-6A IT:L TR | Micron Technology Inc. | SDRAM 128Mb (4Mx32) 166Mhz 6ns C | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 711 | |
 | | MT48LC4M32B2P-6A XIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,347 | |