 | | MT48LC4M16A2F4-7E:G TR | Micron Technology Inc. | IC DRAM 64MBIT PARALLEL 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: 14 ns | 626 | |
 | | MT48LC4M16A2P-6 IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 958 | |
 | | MT48LC4M16A2P-6 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 558 | |
 | | MT48LC4M16A2P-6:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,627 | |
 | | MT48LC4M16A2P-6:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,030 | |
 | N/A | MT48LC4M16A2P-6A AAT:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 182 | |
 | N/A | MT48LC4M16A2P-6A AAT:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 581 | |
 | N/A | MT48LC4M16A2P-6A AIT:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 527 | |
 | N/A | MT48LC4M16A2P-6A AIT:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 80 | |
 | | MT48LC4M16A2P-75 IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,184 | |
 | | MT48LC4M16A2P-75 IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 661 | |
 | | MT48LC4M16A2P-75 L:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 880 | |
 | | MT48LC4M16A2P-75 L:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 815 | |
 | | MT48LC4M16A2P-75:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,030 | |
 | | MT48LC4M16A2P-75:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,897 | |
 | N/A | MT48LC4M16A2P-7E AIT:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,034 | |
 | N/A | MT48LC4M16A2P-7E AIT:J TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 248 | |
 | | MT48LC4M16A2P-7E IT:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 563 | |
 | | MT48LC4M16A2P-7E IT:G TR | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,684 | |
 | | MT48LC4M16A2P-7E IT:J | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 981 | |