 | | MT48LC32M16A2P-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 156 | |
 | | MT48LC32M16A2TG-75 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,365 | |
 | | MT48LC32M16A2TG-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 208 | |
 | | MT48LC32M8A2BB-6A:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 12 ns | 1,368 | |
 | | MT48LC32M8A2BB-6A:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 12 ns | 1,633 | |
 | | MT48LC32M8A2BB-75:D | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 103 | |
 | | MT48LC32M8A2BB-7E:G | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 14 ns | 718 | |
 | | MT48LC32M8A2BB-7E:G TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 14 ns | 772 | |
 | | MT48LC32M8A2FB-75 L:D TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 388 | |
 | | MT48LC32M8A2FB-75:D TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 1,594 | |
 | | MT48LC32M8A2FB-7E:D TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 14 ns | 774 | |
 | | MT48LC32M8A2P-6A IT:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,679 | |
 | | MT48LC32M8A2P-6A IT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 362 | |
 | | MT48LC32M8A2P-6A:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,934 | |
 | | MT48LC32M8A2P-6A:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,307 | |
 | | MT48LC32M8A2P-6A:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 23 | |
 | | MT48LC32M8A2P-6A:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 466 | |
 | | MT48LC32M8A2P-75 IT:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 602 | |
 | | MT48LC32M8A2P-75 IT:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 215 | |
 | | MT48LC32M8A2P-75 L:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 676 | |