 | | W9425G6EH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 726 | |
 | | W9425G6JB-5 | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,299 | |
 | | W9425G6JB-5 TR | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 369 | |
 | | W9425G6JB-5I | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 584 | |
 | | W9425G6JB-5I TR | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,053 | |
 | | W9425G6KH-4 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 184 | |
 | | W9425G6KH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,098 | |
 | | W9425G6KH-5 TR | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,050 | |
 | | W9425G6KH-5I | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 620 | |
 | | W9425G6KH-5I TR | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 32 | |
 | | W9464G6JH-4 | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 788 | |
 | | W9464G6JH-5 | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,336 | |
 | | W9464G6JH-5I | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 719 | |
 | | W9464G6KH-4 | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,901 | |
 | N/A | W9464G6KH-4 TR | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 22 | |
 | | W9464G6KH-5 | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,366 | |
 | | W9464G6KH-5 TR | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 228 | |
 | | W9464G6KH-5I | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 749 | |
 | | W9464G6KH-5I TR | Winbond Electronics | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,196 | |
 | | W9725G6IB-25 | Winbond Electronics | IC DRAM 256MBIT PAR 84WBGA | DRAM Memory | 84-WBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 611 | |