 | | W9812G6KH-5I TR | Winbond Electronics | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 815 | |
 | | W9812G6KH-6 | Winbond Electronics | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 620 | |
 | | W9812G6KH-6 TR | Winbond Electronics | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,014 | |
 | | W9812G6KH-6I | Winbond Electronics | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 762 | |
 | | W9812G6KH-6I TR | Winbond Electronics | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 148 | |
 | | W9825G2JB-6 | Winbond Electronics | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 722 | |
 | | W9825G2JB-6 TR | Winbond Electronics | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,501 | |
 | | W9825G2JB-6I | Winbond Electronics | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,773 | |
 | | W9825G2JB-6I TR | Winbond Electronics | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 927 | |
 | | W9825G2JB-75 | Winbond Electronics | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 566 | |
 | | W9825G2JB-75 TR | Winbond Electronics | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 83 | |
 | | W9825G2JB75I | Winbond Electronics | IC DRAM 256MBIT LVTTL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 8 | |
 | | W9825G6EH-6 | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 406 | |
 | | W9825G6JB-6 | Winbond Electronics | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 771 | |
 | | W9825G6JB-6 TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 42 | |
 | | W9825G6JB-6I | Winbond Electronics | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 734 | |
 | | W9825G6JB-6I TR | Winbond Electronics | IC DRAM 256MBIT LVTTL 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 849 | |
 | | W9825G6JH-6 TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 603 | |
 | | W9825G6JH-6I | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 642 | |
 | | W9825G6JH-6I TR | Winbond Electronics | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,105 | |