 | | W74M25JWZEIQ | Winbond Electronics | IC FLASH 256MBIT 104MHZ 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C | Memory Organization: 32M x 8 Packaging: 8-WDFN Exposed Pad Write Cycle Time Word Page: N/A | 1,547 | |
 | | W74M25JWZEIQ TR | Winbond Electronics | IC FLASH 256MBIT 104MHZ 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C | Memory Organization: 32M x 8 Packaging: 8-WDFN Exposed Pad Write Cycle Time Word Page: N/A | 833 | |
 | | W74M25JWZPIQ | Winbond Electronics | IC FLASH 256MBIT 104MHZ 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C | Memory Organization: 32M x 8 Packaging: 8-WDFN Exposed Pad Write Cycle Time Word Page: N/A | 1,500 | |
 | | W74M25JWZPIQ TR | Winbond Electronics | IC FLASH 256MBIT 104MHZ 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C | Memory Organization: 32M x 8 Packaging: 8-WDFN Exposed Pad Write Cycle Time Word Page: N/A | 1,937 | |
 | N/A | W74M64FVSSIQ | Winbond Electronics | IC FLASH 64MBIT SPI/QUAD 8SOIC | Flash Memory | 8-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 Packaging: 8-SOIC (0.209", 5.30mm Width) Write Cycle Time Word Page: N/A | 613 | |
 | N/A | W74M64FVSSIQ TR | Winbond Electronics | IC FLASH 64MBIT SPI/QUAD 8SOIC | Flash Memory | 8-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 Packaging: 8-SOIC (0.209", 5.30mm Width) Write Cycle Time Word Page: N/A | 1,750 | |
 | N/A | W74M64JVSSIQ | Winbond Electronics | IC FLASH 64MBIT SPI/QUAD 8SOIC | Flash Memory | 8-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 Packaging: 8-SOIC (0.209", 5.30mm Width) Write Cycle Time Word Page: N/A | 1,852 | |
 | N/A | W74M64JVSSIQ TR | Winbond Electronics | IC FLASH 64MBIT SPI/QUAD 8SOIC | Flash Memory | 8-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 Packaging: 8-SOIC (0.209", 5.30mm Width) Write Cycle Time Word Page: N/A | 889 | |
 | | W9412G6IH-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 18 | |
 | | W9412G6JB-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 2.7V ~ 2.3V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 1,955 | |
 | | W9412G6JB-5I TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 2.7V ~ 2.3V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 475 | |
 | | W9412G6JH-4 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 673 | |
 | | W9412G6JH-5I | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,958 | |
 | | W9412G6KH-4 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 397 | |
 | N/A | W9412G6KH-4 TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,437 | |
 | | W9412G6KH-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 751 | |
 | | W9412G6KH-5 TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,092 | |
 | | W9412G6KH-5I | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,093 | |
 | | W9412G6KH-5I TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 879 | |
 | | W9425G6EH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 44 | |