 | | AS4C2M32S-7TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 534 | |
 | N/A | AS4C2M32SA-6TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 863 | |
 | N/A | AS4C2M32SA-6TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 609 | |
 | N/A | AS4C2M32SA-6TIN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,468 | |
 | N/A | AS4C2M32SA-6TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 768 | |
 | N/A | AS4C2M32SA-7TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 182 | |
 | N/A | AS4C2M32SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 48 | |
 | N/A | AS4C32M16D1-5BAN | Alliance Memory, Inc. | IC DRAM 512MBIT SSTL 2 60FBGA | DRAM Memory | 60-FBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,640 | |
 | N/A | AS4C32M16D1-5BANTR | Alliance Memory, Inc. | IC DRAM 512MBIT SSTL 2 60FBGA | DRAM Memory | 60-FBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 473 | |
 | N/A | AS4C32M16D1-5BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 281 | |
 | N/A | AS4C32M16D1-5BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,184 | |
 | N/A | AS4C32M16D1-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 394 | |
 | N/A | AS4C32M16D1-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 307 | |
 | | AS4C32M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 676 | |
 | | AS4C32M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 413 | |
 | | AS4C32M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,557 | |
 | | AS4C32M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,035 | |
 | N/A | AS4C32M16D1A-5TAN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 500 | |
 | N/A | AS4C32M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,511 | |
 | N/A | AS4C32M16D1A-5TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,232 | |