Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 1,408
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
FDME064GMG-N230FDME064GMG-N230FlexxoneSD Memory Card (MLC/pSLC/SLC)Flash Memory100-BGA2.7 ~ 3.6V-25°C - 85°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
MLC
Memory Organization:
N/A
Memory Interface:
SD 2.0/3.0
Grade:
Industrial
Packaging:
100-BGA
Qualification:
N/A
1,144
FDME512MSE-N330FDME512MSE-N330FlexxoneSD Memory Card (MLC/pSLC/SLC)Flash Memory100-BGA2.7 ~ 3.6V-40°C - 85°C
Memory Size:
4.096 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
N/A
Memory Interface:
SD 2.0/3.0
Grade:
Industrial
Packaging:
100-BGA
Qualification:
N/A
782
FHND001CVABN/AFHND001CVABFlexxonSLC NAND 1GBFlash MemoryN/A2.7 ~ 3.6V0°C - 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Commercial
Packaging:
9.0x9.0mm FBGA
Qualification:
N/A
911
FHND001CVBBN/AFHND001CVBBFlexxonSLC NAND 1GBFlash MemoryN/A2.7 ~ 3.6V0°C - 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Commercial
Packaging:
6.5x8.0mm FBGA
Qualification:
N/A
1,297
FHND001CVCBN/AFHND001CVCBFlexxonSLC NAND 1GBFlash Memory63-VFBGA2.7 ~ 3.6V0°C - 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Commercial
Packaging:
9.0x11.0mm FBGA
Qualification:
N/A
748
FHND001CVTBN/AFHND001CVTBFlexxonSLC NAND 1GBFlash Memory48-TSOP I2.7 ~ 3.6V0°C - 70°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Commercial
Packaging:
12x20mm TSOP
Qualification:
N/A
530
FHND001EVABN/AFHND001EVABFlexxonSLC NAND 1GBFlash MemoryN/A2.7 ~ 3.6V-40°C - 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Industrial
Packaging:
9.0x9.0mm FBGA
Qualification:
N/A
1,283
FHND001EVBBN/AFHND001EVBBFlexxonSLC NAND 1GBFlash MemoryN/A2.7 ~ 3.6V-40°C - 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Industrial
Packaging:
6.5x8.0mm FBGA
Qualification:
N/A
372
FHND001EVCBN/AFHND001EVCBFlexxonSLC NAND 1GBFlash Memory63-VFBGA2.7 ~ 3.6V-40°C - 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Industrial
Packaging:
9.0x11.0mm FBGA
Qualification:
N/A
725
FHND001EVTBN/AFHND001EVTBFlexxonSLC NAND 1GBFlash Memory48-TSOP I2.7 ~ 3.6V-40°C - 85°C
Memory Size:
1 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
128M x 8
Memory Interface:
N/A
Grade:
Industrial
Packaging:
12x20mm TSOP
Qualification:
N/A
1,645
FHND004CVC0N/AFHND004CVC0FlexxonSLC NAND 4GBFlash Memory63-VFBGA2.7 ~ 3.6V0°C - 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
512M x 8
Memory Interface:
N/A
Grade:
Commercial
Packaging:
9.0x11.0mm FBGA
Qualification:
N/A
527
FHND004CVT0N/AFHND004CVT0FlexxonSLC NAND 4GBFlash Memory48-TSOP I2.7 ~ 3.6V0°C - 70°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
512M x 8
Memory Interface:
N/A
Grade:
Commercial
Packaging:
12x20mm TSOP
Qualification:
N/A
331
FHND004EVC0N/AFHND004EVC0FlexxonSLC NAND 4GBFlash Memory63-VFBGA2.7 ~ 3.6V-40°C – 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
512M x 8
Memory Interface:
N/A
Grade:
Industrial
Packaging:
9.0×11.0mm FBGA
Qualification:
N/A
600
FHND004EVT0N/AFHND004EVT0FlexxonSLC NAND 4GBFlash Memory48-TSOP I2.7 ~ 3.6V-40°C - 85°C
Memory Size:
4 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
SLC
Memory Organization:
512M x 8
Memory Interface:
N/A
Grade:
Industrial
Packaging:
12x20mm TSOP
Qualification:
N/A
289
N/AN/AFM62D1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
501
N/AN/AFM62D2G2GKA (2Q)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,410
N/AN/AFM62D2G2GXA (2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
442
N/AN/AFM62D4G2GXB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,215
N/AN/AFM6BD1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
32M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
149
N/AN/AFM6BD2G2GXA(2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
931

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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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