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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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N/AN/AFM6BD2G2GXA2LESMT2Gb NAND+LPDDR2 MCP Ind.Flash Memory10.5x8 (mm),162ball2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
304
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N/AN/AFM6BD4G2GXB(2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
246
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N/AN/AFM6BD4G4GKMA (2J)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
1,049
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N/AN/AFM6BD4G4GXMB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
219
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N/AN/AFM6HZ4G4GXBESMT4Gb NAND+LPDDR4x MCPFlash Memory9.5x8 (mm),149ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
9.5x8 (mm),149ball
1,591
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N/AN/AFM6HZ8G8GKDZA (2R)ESMT8Gb NAND+LPDDR4x MCP Auto.Flash Memory9.5x8 (mm),149ball2.5V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
9.5x8 (mm),149ball
1,072
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IS21EF04GP-BCLIN/AIS21EF04GP-BCLIIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
1,666
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IS21EF04GP-BCLI-TRN/AIS21EF04GP-BCLI-TRIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
260
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IS21EF04GP-JCLIN/AIS21EF04GP-JCLIIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
1,698
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IS21EF04GP-JCLI-TRN/AIS21EF04GP-JCLI-TRIntegrated Silicon Solution Inc4GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
667
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IS21EF04GP-JQLIN/AIS21EF04GP-JQLIIntegrated Silicon Solution Inc4GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
812
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IS21EF04GP-JQLI-TRN/AIS21EF04GP-JQLI-TRIntegrated Silicon Solution Inc4GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (pSLC)
Write Cycle Time Word Page:
N/A
1,541
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IS21EF08G-BCLIN/AIS21EF08G-BCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
838
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QUOTE
IS21EF08G-BCLI-TRN/AIS21EF08G-BCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
882
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QUOTE
IS21EF08G-JCLIN/AIS21EF08G-JCLIIntegrated Silicon Solution IncIC FLASH 64MBIT EMMC 153FBGAFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
182
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QUOTE
IS21EF08G-JCLI-TRN/AIS21EF08G-JCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
639
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QUOTE
IS21EF08G-JQLI-TRN/AIS21EF08G-JQLI-TRIntegrated Silicon Solution Inc8GB, 100 BALL FBGA, 3.3V, ROHS,Flash Memory100-LFBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
274
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QUOTE
IS21EF08GP-BCLIN/AIS21EF08GP-BCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,172
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QUOTE
IS21EF08GP-BCLI-TRN/AIS21EF08GP-BCLI-TRIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, BOOT PFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
535
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QUOTE
IS21EF08GP-JCLIN/AIS21EF08GP-JCLIIntegrated Silicon Solution Inc8GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,007
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QUOTE

Featured Brands

About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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