Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.
Flash Memory
Total Products: 1,408
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | IS21EF08GP-JCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Industrial Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 153-VFBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 359 | |
 | N/A | IS21EF08GP-JQLI | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Industrial Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 100-LBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 52 | |
 | N/A | IS21EF08GP-JQLI-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Industrial Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 100-LBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 321 | |
 | N/A | IS22EF04GP-JCLA2 | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 153-VFBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,961 | |
| N/A | N/A | IS22EF04GP-JCLA2-TR | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 153-VFBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 950 | |
 | N/A | IS22EF04GP-JQLA2 | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 100-LBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,619 | |
| N/A | N/A | IS22EF04GP-JQLA2-TR | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Memory Size: 32 Gbit Memory Type: Non-Volatile Packaging: 100-LBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 602 | |
 | N/A | IS22EF08G-JCLA2-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 153-VFBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 420 | |
 | N/A | IS22EF08G-JQLA2-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 100-LBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,196 | |
 | N/A | IS22EF08GP-JCLA2 | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 153-VFBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 8 | |
| N/A | N/A | IS22EF08GP-JCLA2-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 153-VFBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 372 | |
 | N/A | IS22EF08GP-JQLA2 | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 100-LBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 874 | |
| N/A | N/A | IS22EF08GP-JQLA2-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 100-LBGA Qualification: AEC-Q100 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 143 | |
 | N/A | IS22TF08G-JCLA1 | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Automotive Memory Format: FLASH Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Memory Size: 64 Gbit Memory Type: Non-Volatile Packaging: 153-VFBGA Qualification: AEC-Q100 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 1,354 | |
 | IS25LX064-JHLA3 | Integrated Silicon Solution Inc | IC FLASH 64MBIT SPI/OCTL 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Access Time: N/A Clock Frequency: 133 MHz Grade: Automotive Memory Format: FLASH Memory Interface: SPI - Octal I/O Memory Organization: 8M x 8 Memory Size: 64 Mbit Memory Type: Non-Volatile Packaging: 24-TBGA Qualification: N/A Technology: FLASH Write Cycle Time Word Page: N/A | 82 | ||
 | IS25LX064-JHLA3-TR | Integrated Silicon Solution Inc | IC FLASH 64MBIT SPI/OCTL 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Access Time: N/A Clock Frequency: 133 MHz Grade: Automotive Memory Format: FLASH Memory Interface: SPI - Octal I/O Memory Organization: 8M x 8 Memory Size: 64 Mbit Memory Type: Non-Volatile Packaging: 24-TBGA Qualification: N/A Technology: FLASH Write Cycle Time Word Page: N/A | 733 | ||
 | IS25LX064-JHLE | Integrated Silicon Solution Inc | IC FLASH 64MBIT SPI/OCTL 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 133 MHz Grade: Automotive Memory Format: FLASH Memory Interface: SPI - Octal I/O Memory Organization: 8M x 8 Memory Size: 64 Mbit Memory Type: Non-Volatile Packaging: 24-TBGA Qualification: N/A Technology: FLASH Write Cycle Time Word Page: N/A | 1,619 | ||
 | IS25LX064-JHLE-TR | Integrated Silicon Solution Inc | IC FLASH 64MBIT SPI/OCTL 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: N/A Clock Frequency: 133 MHz Grade: Automotive Memory Format: FLASH Memory Interface: SPI - Octal I/O Memory Organization: 8M x 8 Memory Size: 64 Mbit Memory Type: Non-Volatile Packaging: 24-TBGA Qualification: N/A Technology: FLASH Write Cycle Time Word Page: N/A | 1,043 | ||
 | IS25LX128-JHLA3 | Integrated Silicon Solution Inc | IC FLASH 128MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Access Time: N/A Clock Frequency: 133 MHz Grade: Automotive Memory Format: FLASH Memory Interface: SPI - Octal I/O Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Non-Volatile Packaging: 24-TBGA Qualification: N/A Technology: FLASH Write Cycle Time Word Page: N/A | 507 | ||
 | IS25LX128-JHLA3-TR | Integrated Silicon Solution Inc | IC FLASH 128MBIT SPI/OCT 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Access Time: N/A Clock Frequency: 133 MHz Grade: Automotive Memory Format: FLASH Memory Interface: SPI - Octal I/O Memory Organization: 16M x 8 Memory Size: 128 Mbit Memory Type: Non-Volatile Packaging: 24-TBGA Qualification: N/A Technology: FLASH Write Cycle Time Word Page: N/A | 302 |
About Flash Memory
Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.
Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.
Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.
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