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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

Part Search

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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IS25WX256-JHLA3-TR
IS25WX256-JHLA3-TRIntegrated Silicon Solution IncIC FLASH 256MBIT SPI/OCT 24TFBGAFlash Memory24-TFBGA (6x8)1.7V ~ 2V-40°C ~ 125°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
SPI - Octal I/O
Memory Organization:
32M x 8
Memory Size:
256 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
1,601
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IS25WX256-JHLE
IS25WX256-JHLEIntegrated Silicon Solution IncIC FLASH 256MBIT SPI/OCT 24TFBGAFlash Memory24-TFBGA (6x8)1.7V ~ 2V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
SPI - Octal I/O
Memory Organization:
32M x 8
Memory Size:
256 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
678
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IS25WX256-JHLE-TR
IS25WX256-JHLE-TRIntegrated Silicon Solution IncIC FLASH 256MBIT SPI/OCT 24TFBGAFlash Memory24-TFBGA (6x8)1.7V ~ 2V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
SPI - Octal I/O
Memory Organization:
32M x 8
Memory Size:
256 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
748
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IS25WX512M-JHE-TR
IS25WX512M-JHE-TRIntegrated Silicon Solution IncIC FLASH 512MBIT SPI/OCT 24TFBGAFlash Memory24-TFBGA (6x8)1.7V ~ 2V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
SPI - Octal I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
742
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IS25WX512M-JHLA3
IS25WX512M-JHLA3Integrated Silicon Solution IncIC FLASH 512MBIT SPI/OCT 24TFBGAFlash Memory24-TFBGA (6x8)1.7V ~ 2V-40°C ~ 125°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
SPI - Octal I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
12
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IS25WX512M-JHLA3-TR
IS25WX512M-JHLA3-TRIntegrated Silicon Solution IncIC FLASH 512MBIT SPI/OCT 24TFBGAFlash Memory24-TFBGA (6x8)1.7V ~ 2V-40°C ~ 125°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
SPI - Octal I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
1,773
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IS25WX512M-JHLE
IS25WX512M-JHLEIntegrated Silicon Solution IncIC FLASH 512MBIT SPI/OCT 24TFBGAFlash Memory24-TFBGA (6x8)1.7V ~ 2V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
SPI - Octal I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
1,217
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IS27TH064G21-JCLA2
IS27TH064G21-JCLA2Integrated Silicon Solution Inc64GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
38.4 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
UFS2.1
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
AEC-Q100
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
771
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N/A
IS27TH064G21-JCLIIntegrated Silicon Solution Inc64GB, 153 BALL FBGA, 3.3V, ROHSFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
38.4 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
UFS2.1
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,730
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N/A
IS27TH064G31-JCLA2Integrated Silicon Solution Inc64GB, 153 BALL FBGA, 3.3V, ROHS,Flash Memory153-VFBGA (11.5x13)2.25V ~ 2.75V-40°C ~ 105°C (TA)
Access Time:
N/A
Clock Frequency:
38.4 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
UFS 3.1
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
AEC-Q100
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
861
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IS27TH064G31-JCLI
IS27TH064G31-JCLIIntegrated Silicon Solution Inc64GB, 153 BALL FBGA, 3.3V, ROHSFlash Memory153-VFBGA (11.5x13)2.25V ~ 2.75V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
38.4 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
UFS 3.1
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
204
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N/A
JS27HP1G08SCDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
429
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N/A
JS27HP2G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
809
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N/A
JS27HP4G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
28
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N/A
JS27HP4G08SDDA-45MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 105°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
898
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N/A
JS27HP4G08SFDA-45Jeju Semiconductor Corporation4K page 4-bit ECC 256 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
416
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N/A
JS27HP4G16SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x16
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
116
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N/A
JS27HP8G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,334
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N/A
JS27HP8G08SDDA-45MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 105°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
696
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N/A
JS27HU1G08SCDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
907
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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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