JS27HP8G08SDDA-45M

The JS27HP8G08SDDA-45M is an 8 Gbit SLC NAND flash memory organized as x8 with a 2K page plus 128-byte spare area and 4-bit ECC. It implements a parallel NAND interface with low-voltage 1.8 V supply and is optimized for high-density solid-state mass storage and embedded non-volatile data retention.

Designed for applications that require robust data integrity and compact board footprint, this device combines fast access timing, on-chip ECC support and standard NAND command compatibility to simplify integration into storage, embedded and industrial designs.

Key Features

• Memory Density & Organization — 8 Gbit capacity in x8 organization, providing high-density storage in a compact footprint.
• Page & Spare Configuration — 2K byte main page with 128 byte spare area and 4‑bit ECC for enhanced data protection across stored pages.
• On-Die ECC — 4-bit ECC per 528 bytes (x8) to improve data reliability during read/program cycles.
• Performance — 45 ns access time and 300 µs typical page program time, enabling efficient read and program operations for mass storage tasks.
• Interface — Parallel NAND interface, x8 I/O bus width and ONFI 1.0 compliant command set for straightforward system integration.
• Power — 1.8 V supply (device Vcc range 1.7 V–1.95 V) suitable for low-voltage system designs.
• Reliability & Endurance — Data retention and endurance figures provided in the datasheet, including program/erase cycle specifications and hardware data protection during power transitions.
• Package & Mounting — 63-ball FBGA (9.0 × 11.0 mm) surface-mount package for compact board-level integration.
• Operating Range — Specified operating temperature range from −40 °C to 105 °C.
• Additional NAND Capabilities — Features such as copy-back program, cache-read buffer, status register and chip-enable don’t-care for simplified controller interaction.

Typical Applications

• Solid-state mass storage — High-density NAND capacity and ECC support for consumer and industrial storage devices.
• Embedded storage — Firmware and data storage in embedded systems that require non-volatile memory with on-chip ECC and parallel interface.
• Data logging and industrial memory — Reliable data retention and wide operating temperature range for long-term storage in industrial applications.
• Mass-market electronics — Compact FBGA package and low-voltage operation for space-constrained consumer devices that need cost-effective flash storage.

Unique Advantages

• High-density storage in a compact package: 8 Gbit capacity in a 63-ball FBGA (9.0 × 11.0 mm) reduces board area while delivering substantial non-volatile storage.
• On-chip ECC for data integrity: 4-bit ECC per 528 bytes (x8) improves read/program robustness without adding external ECC logic.
• Low-voltage operation: 1.8 V supply reduces power draw and eases integration into modern low-voltage systems.
• Fast access and program timings: 45 ns access time and 300 µs typical page program time support responsive storage operations.
• Standard NAND interface: Parallel x8 interface and ONFI command set compatibility simplify controller design and migration across densities.
• Designed for reliability: Hardware data protection during power transitions and documented endurance/data retention figures provide predictable behavior for long-term deployments.

Why Choose JS27HP8G08SDDA-45M?

The JS27HP8G08SDDA-45M delivers a balanced combination of high storage density, on-die ECC and low-voltage operation in a compact FBGA package. Its parallel NAND interface and ONFI-compatible command set make it straightforward to integrate into systems that require robust, non-volatile mass storage with predictable performance.

This device is well suited to engineers and designers building cost-effective embedded and storage solutions that demand reliable data integrity, efficient board utilization and clear endurance/data-retention characteristics as documented in the product datasheet.

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