JS27HU2G08SDDA-25M

The JS27HU2G08SDDA-25M is a 2 Gbit SLC NAND Flash memory organized as x8 with 2K-byte main pages and 128-byte spare area, offering on-chip 4-bit ECC. It delivers a parallel NAND interface with 3.3 V supply and a compact 63-ball FBGA (9.0 × 11.0 mm) package for space-efficient board integration.

Built for cost-effective solid-state mass storage applications, this device combines fast read access and program times with ECC and spare area to support reliable data storage and system-level error management.

Key Features

• Memory Core 2 Gbit SLC NAND Flash organized as x8 with 2K-byte page size and 128-byte spare area to accommodate metadata and ECC.
• Error Correction 4-bit ECC implemented per 528 bytes (x8) to improve data integrity during read/program operations.
• Performance Read cycle performance includes 25 ns sequential access (3.3 V specification) and a typical page program time of 300 µs. Random access timing for 2 Gbit devices is specified in the datasheet.
• Interface Parallel NAND interface with x8 I/O and support for standard NAND command set (ONFI 1.0 command set compatibility noted in the datasheet).
• Power 3.3 V supply range (VCC = 2.7 V to 3.6 V) for systems operating at common board voltages.
• Reliability & Endurance Typical data retention of 10 years; endurance figures in the datasheet include up to 100,000 program/erase cycles for the -40 °C to 85 °C condition and 60,000 program/erase cycles at -40 °C to 105 °C as specified.
• Package & Mounting 63-ball FBGA (9.0 × 11.0 mm) surface-mount package for compact system designs.
• Operating Range & Compliance Specified operating temperature range of -40 °C to 105 °C and RoHS compliance per the product documentation.

Typical Applications

• Solid-state mass storage — NAND-based storage modules and removable storage where large raw capacity and spare area are required.
• Embedded data storage — Systems that need raw NAND for file systems, firmware storage, or application data with on-device ECC support.
• Data logging and archival — Applications that benefit from long data retention and programmed endurance characteristics as specified.

Unique Advantages

• On-chip 4-bit ECC and generous spare area — Enables enhanced error management across 528-byte sectors while preserving main-page capacity for user data.
• Fast page program and read timing — 300 µs typical page program time and 25 ns sequential read cycle (3.3 V) help maximize throughput for sequential operations.
• Compact FBGA footprint — 63-ball FBGA (9.0 × 11.0 mm) reduces PCB area while supporting surface-mount assembly processes.
• Wide operating temperature — Specified operation from -40 °C to 105 °C supports use in temperature-demanding environments.
• Standards-based command set — ONFI 1.0 command set compatibility simplifies integration with NAND controller designs that support the standard command set.

Why Choose JS27HU2G08SDDA-25M?

The JS27HU2G08SDDA-25M offers a balanced combination of capacity, on-device 4-bit ECC, and spare area in a compact FBGA package. Its 3.3 V operation, parallel x8 interface, and documented timing make it suitable for designs that require cost-effective raw NAND storage with built-in error correction and reliable program/erase characteristics.

With datasheet-specified endurance and data retention figures, this device provides clear, verifiable parameters for storage subsystem planning and lifecycle projections, helping engineers assess long-term robustness and maintainability.

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