JS27HU1G08SCDA-25M
| Part Description |
2K page 4-bit ECC 64 byte spare |
|---|---|
| Quantity | 1,637 Available (as of June 17, 2026) |
| Product Category | Flash Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | 63-BGA (9.0x11.0mm) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 25 ns | Grade | Automotive | ||
| Clock Frequency | 40 MHz | Voltage | 3.3V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C - 105°C | Write Cycle Time Word Page | 300 µs | Mounting Method | Surface Mount | ||
| Memory Interface | Parallel | Memory Organization | x8 | Moisture Sensitivity Level | 3 | ||
| RoHS Compliance | Compliant | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of JS27HU1G08SCDA-25M – 2K page 4-bit ECC 64 byte spare
The JS27HU1G08SCDA-25M is a 1 Gbit SLC NAND flash memory device with 2K-byte main pages and 64-byte spare area designed for high-density mass storage applications. It implements 4-bit ECC and an x8 memory organization with a parallel NAND interface for straightforward integration into embedded storage systems.
Built for reliable non‑volatile storage, the device offers fast sequential byte access and typical page program times that support responsive read/write workloads while providing long data retention and endurance characteristics suitable for demanding environments.
Key Features
- Memory Core 1 Gbit SLC NAND flash organized as x8 with 2K-byte main page plus 64-byte spare area; supports 4-bit ECC for enhanced data integrity.
- Performance Sequential byte cycle time of 25 ns (3.3V); random page access (tR) up to 25 µs for the 1Gb device; typical page program time 300 µs.
- Interface Parallel NAND interface with x8 I/O and ONFI 1.0 compliant command set for common NAND command compatibility and simple microcontroller/memory controller integration.
- Power 3.3 V device operating range VCC = 2.7 V to 3.6 V, enabling use in standard 3.3 V systems.
- Reliability & Endurance Data retention typical 10 years; endurance published at 100,000 program/erase cycles (-40°C to 85°C) and 60,000 cycles (-40°C to 105°C) when used with 4-bit ECC per 528 bytes.
- Block & Plane Organization Block size and plane counts as defined in the series: 128K-byte block sizes with spare regions and 1,024 blocks per plane for the 1Gbit device.
- Package & Mounting 63-ball FBGA (9.0 × 11.0 × 1.0 mm) surface-mount package, lead‑free and halogen‑free (RoHS compliant).
- Operating Range Specified operating temperature range of -40°C to 105°C.
- Throughput Enhancements Internal cache read and copy‑back program capability to improve read throughput and enable in-device data movement without external buffering.
Typical Applications
- Mass Storage and Embedded Media High-density SLC NAND configuration and 4-bit ECC make this device suitable for embedded mass-storage functions in consumer and industrial products.
- Firmware and Boot Storage Low access latency and non-volatile retention provide a reliable option for storing boot code and firmware images.
- Data Logging and Industrial Storage Extended operating temperature and published endurance figures support long-term data logging and storage in temperature-challenging environments.
- Device-Level Buffering and Cache Internal cache read and copy-back features allow acceleration of read-intensive tasks and local data management without added external memory.
Unique Advantages
- 4-bit ECC Integrated: Enhances data integrity across pages and spare area without requiring additional host-side ECC implementation.
- SLC NAND Density: Provides a cost-effective 1 Gbit SLC option for designs needing durable, non‑volatile storage.
- Fast Sequential Access: 25 ns byte cycles (3.3V) support responsive read throughput for embedded applications.
- Proven NAND Feature Set: ONFI command compatibility, cache read, and copy-back program capability simplify controller implementation and improve system throughput.
- Wide Operating Range: Specified -40°C to 105°C operating range and RoHS‑compliant packaging support deployment in varied temperature environments.
- Compact Surface-Mount Package: 63-ball FBGA (9.0 × 11.0 mm) minimizes PCB footprint for space-constrained designs.
Why Choose JS27HU1G08SCDA-25M?
The JS27HU1G08SCDA-25M combines SLC NAND robustness with 4-bit ECC and a conventional parallel NAND interface to deliver a compact, high-density non-volatile storage element for embedded and mass-storage applications. Its mix of documented endurance, data retention, and fast sequential access provides design teams with verifiable performance metrics for system-level storage planning.
This device is well suited to engineers and procurement teams designing compact storage subsystems, firmware/boot regions, and data-logging solutions that require a balance of density, reliability, and standard NAND interfacing. The RoHS‑compliant FBGA package and published electrical and timing characteristics support rapid integration and qualification into production designs.
Request a quote or submit an RFQ to receive pricing and availability information for the JS27HU1G08SCDA-25M. Our team can provide lead-time details and assist with product selection for your storage design needs.

Date Founded: 2000
Headquarters: Jeju-si, Jeju-do, Republic of Korea
Employees: 100+
Revenue: $100 Million
Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH