JS27HU4G08SDDA-25

2K page 4-bit ECC 128 byte spare
Part Description

2K page 4-bit ECC 128 byte spare

Quantity 1,471 Available (as of June 17, 2026)
Product CategoryFlash Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package63-BGA (9.0x11.0mm)Memory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size4 GbitAccess Time25 nsGradeIndustrial
Clock Frequency40 MHzVoltage3.3VMemory TypeNon-Volatile
Operating Temperature-40°C - 85°CWrite Cycle Time Word Page300 µsMounting MethodSurface Mount
Memory InterfaceParallelMemory Organizationx8Moisture Sensitivity Level3
RoHS ComplianceCompliantECCNEAR99HTS Code8542.32.00.71

Overview of JS27HU4G08SDDA-25 – 2K page 4-bit ECC 128 byte spare

The JS27HU4G08SDDA-25 is a 4 Gbit SLC NAND flash memory in an x8 organization designed for parallel interfacing in embedded and industrial storage applications. It provides 2K data pages with 128 bytes of spare area and integrated 4-bit ECC to support reliable data integrity for mass storage and firmware/media retention.

Targeted for systems requiring non-volatile, high-density storage, this device operates from a 3.3 V supply (VCC 2.7 V–3.6 V), supports a 40 MHz interface, and is specified for industrial temperature operation from −40 °C to 85 °C.

Key Features

  • Memory Core 4 Gbit SLC NAND flash with x8 I/O organization providing 2K byte main page size plus 128 byte spare area for metadata and ECC.
  • Data Integrity Built-in 4-bit ECC (per 528 bytes for x8) to enhance error correction and support endurance over program/erase cycles.
  • Performance Sequential read cycle time 25 ns (3.3 V), access time specified at 25 ns and page program time typically 300 µs for reliable page writes.
  • Interface Parallel NAND interface compatible with x8 bus width and ONFI 1.0 compliant command set for straightforward integration.
  • Reliability & Endurance Typical data retention of 10 years and endurance rated at 100,000 program/erase cycles over the industrial temperature range (−40 °C to 85 °C) when used with the specified 4-bit ECC.
  • Erase & Internal Operations Fast block erase time typically 3.5 ms (4 Gbit device) plus support for copy-back program and cache read to improve throughput and internal data movement.
  • Power 3.3 V device operation with VCC range 2.7 V–3.6 V.
  • Package & Mounting 63-ball FBGA (63-BGA) package, 9.0 × 11.0 mm, surface-mount for compact board-level integration.
  • Temperature & Compliance Industrial operating temperature −40 °C to 85 °C and RoHS compliant (lead-free, halogen-free).

Typical Applications

  • Embedded Mass Storage High-density SLC NAND for firmware, OS images or data storage in embedded systems that require reliable non-volatile memory.
  • Industrial Data Logging Durable program/erase endurance and 4-bit ECC make it suitable for long-term data capture and archival in industrial environments.
  • Consumer/Appliance Storage Use as local flash storage for media, configuration or application data where compact FBGA packaging and parallel interface are preferred.
  • Boot and Firmware Storage 2K page architecture with spare area supports robust boot image storage with ECC and metadata.

Unique Advantages

  • High-density SLC NAND: 4 Gbit capacity in a compact 63-ball FBGA for high-capacity storage without large PCB area impact.
  • Integrated 4-bit ECC: On-die ECC per 528 bytes (x8) improves data reliability and extends usable life across program/erase cycles.
  • Industrial-grade specification: Rated for −40 °C to 85 °C operation, supporting deployments in demanding temperature environments.
  • Fast program and erase characteristics: Typical page program time of 300 µs and block erase around 3.5 ms help meet throughput requirements for many embedded workloads.
  • ONFI-compatible interface: Standard NAND command set compliance simplifies integration with controllers and existing NAND ecosystems.
  • Long data retention and endurance: Typical 10-year data retention and 100,000 P/E cycles (industrial temperature range) support long-term deployments.

Why Choose JS27HU4G08SDDA-25?

The JS27HU4G08SDDA-25 combines SLC reliability, a 2K+128 spare page architecture, and integrated 4-bit ECC to deliver a robust solution for embedded storage needs where data integrity, endurance, and package density matter. Its 3.3 V operation, 40 MHz interface, and ONFI-compliant command set make it straightforward to integrate into a wide range of industrial and embedded designs.

This device is suited to designers and procurement teams seeking a compact, high-endurance NAND flash with industrial temperature support and proven NAND features (cache read, copy-back program) for firmware storage, mass data logging, and embedded mass storage applications.

Request a quote or contact sales to discuss pricing, lead times, and sample availability for JS27HU4G08SDDA-25.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


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