JS27HU8G08SDDA-25

2K page 4-bit ECC 128 byte spare
Part Description

2K page 4-bit ECC 128 byte spare

Quantity 1,223 Available (as of June 17, 2026)
Product CategoryFlash Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package63-BGA (9.0x11.0mm)Memory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size8 GbitAccess Time25 nsGradeIndustrial
Clock Frequency40 MHzVoltage3.3VMemory TypeNon-Volatile
Operating Temperature-40°C - 85°CWrite Cycle Time Word Page300 µsMounting MethodSurface Mount
Memory InterfaceParallelMemory Organizationx8Moisture Sensitivity Level3
RoHS ComplianceCompliantECCNEAR99HTS Code8542.32.00.71

Overview of JS27HU8G08SDDA-25 – 2K page 4-bit ECC 128 byte spare

The JS27HU8G08SDDA-25 is an 8 Gbit SLC NAND Flash memory device with a 2K-byte main page and 128-byte spare area, incorporating 4-bit ECC. Designed for non-volatile mass storage in industrial embedded systems, it delivers a parallel x8 interface and pinout compatibility across densities for straightforward system integration.

Built for industrial operation, the device supports a 3.3 V supply (VCC 2.7 V–3.6 V), a 63-ball FBGA (9.0 × 11.0 mm) package, and an operating temperature range of −40 °C to 85 °C, providing a balanced combination of capacity, reliability, and compact packaging for storage-focused applications.

Key Features

  • Core Memory Architecture Single-Level Cell (SLC) NAND flash delivering 8 Gbit density, optimized for cost-effective solid-state mass storage.
  • Page and Block Organization 2K-byte page size with 128-byte spare area (per part name), supporting page program and cache read operations for improved throughput.
  • Error Correction 4-bit ECC (per datasheet series) to support data integrity across programmed pages and spare area.
  • Interface and I/O Parallel x8 I/O with 40 MHz clock frequency and pinout compatibility across densities to simplify BOM and design migration.
  • Performance Byte access timing of 25 ns and typical page program time of 300 µs (3.3 V), enabling predictable read/write responsiveness in embedded storage tasks.
  • Reliability & Endurance Endurance up to 100,000 program/erase cycles at the industrial temperature range and typical 10-year data retention as specified in the datasheet series.
  • Power 3.3 V supply operation (VCC = 2.7 V–3.6 V) for compatibility with common industrial power rails.
  • Package & Temperature 63-ball FBGA (9.0 × 11.0 mm) surface-mount package and industrial-grade operating temperature from −40 °C to 85 °C.
  • Standards & Command Set ONFI 1.0 compliant command set as indicated in the product series documentation for standard NAND command compatibility.

Typical Applications

  • Embedded Mass Storage Reliable non-volatile storage for embedded systems that require high-density NAND with ECC-protected pages.
  • Industrial Data Logging Durable SLC NAND suited for data logging and archival tasks within industrial temperature ranges and long retention requirements.
  • Firmware & System Storage On-board program and boot storage for controllers and devices where parallel x8 interface and simple host control are advantageous.

Unique Advantages

  • High Density, Compact Package 8 Gbit capacity in a 63-ball FBGA (9.0 × 11.0 mm) minimizes board area while maximizing storage.
  • ECC-Protected Pages 4-bit ECC across the spare area improves data integrity for stored content and supports robust field reliability.
  • Industrial Temperature Rating Specified operation from −40 °C to 85 °C addresses a wide range of industrial environments without derating device endurance.
  • Predictable Program and Read Latency Typical page program time of 300 µs and byte access timing of 25 ns enable deterministic performance planning for system designers.
  • ONFI-Compatible Command Set Standardized command set support facilitates interoperability with existing NAND controller implementations.
  • Pinout Compatibility Across Densities Consistent pinouts for x8/x16 variants simplify design migration between capacities and reduce rework when scaling designs.

Why Choose JS27HU8G08SDDA-25?

The JS27HU8G08SDDA-25 positions itself as a reliable, high-density SLC NAND Flash option for industrial embedded storage. Its combination of an 8 Gbit capacity, 2K-page architecture with 128-byte spare area, 4-bit ECC, and industrial temperature rating delivers a solution balanced for endurance, data integrity, and compact PCB footprints.

This device is suited to engineers and procurement teams building industrial storage, firmware, or embedded mass-storage solutions that require predictable program/read timing, long data retention, and simplified migration across NAND densities while maintaining a small board footprint.

Request a quote or contact sales to discuss availability, pricing, and volume options for JS27HU8G08SDDA-25.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


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