JS27HP8G08SDDA-45

The JS27HP8G08SDDA-45 is an 8 Gbit SLC NAND Flash memory device in an x8 parallel interface optimized for industrial-grade non-volatile storage. It implements 4‑bit ECC and a 2K page architecture with a 128‑byte spare area, delivering durable storage for embedded and mass‑storage applications.

Designed for 1.8 V systems, the device combines low-voltage operation, a compact 63‑ball FBGA package, and industrial temperature operation to address embedded industrial storage, data logging and solid‑state mass storage use cases where endurance and long data retention are required.

Key Features

• Memory Core 8 Gbit SLC NAND Flash organized as x8 I/O with 2K page size plus 128‑byte spare area for metadata and ECC.
• Error Correction 4‑bit ECC capability (per 528 bytes for x8) to support data integrity and endurance across program/erase cycles.
• Performance 45 ns access time (typical for 1.8 V operation) and page program time of 300 µs (typical) to support reliable read/write throughput.
• Interface Parallel NAND interface with x8 bus width and ONFI 1.0 compliant command set and pinout compatibility across densities.
• Power 1.8 V supply device (VCC range 1.7 V–1.95 V) for low‑voltage system integration.
• Reliability & Endurance 10 years data retention (typical) and up to 100,000 program/erase cycles at –40 °C to 85 °C (industrial) when used with 4‑bit ECC.
• Package & Temperature 63‑ball FBGA (9.0 × 11.0 × 1.0 mm) surface‑mount package and industrial operating range of –40 °C to 85 °C.
• Compliance Lead‑free, halogen‑free and RoHS compliant.
• Clock / Timing Clock frequency 22.22 MHz (corresponding to 45 ns cycle) for byte access timing in 1.8 V devices.

Typical Applications

• Solid‑State Mass Storage Cost‑effective SLC NAND for embedded mass storage implementations that require high density and data integrity.
• Industrial Embedded Systems Firmware and non‑volatile data storage in industrial controllers and data loggers operating across –40 °C to 85 °C.
• High‑Reliability Storage Applications where endurance and long data retention are important, enabled by 4‑bit ECC and specified program/erase endurance.

Unique Advantages

• High‑density SLC NAND: 8 Gbit capacity delivers significant storage in a compact footprint for embedded designs.
• 4‑bit ECC for data integrity: On‑device ECC support helps preserve data across P/E cycles and contributes to the device’s endurance profile.
• Low‑voltage operation: 1.8 V VCC (1.7–1.95 V range) allows integration into modern low‑power system architectures.
• Industrial temperature rating: Specified operation from –40 °C to 85 °C for deployment in harsh or temperature‑variable environments.
• Compact, standardized package: 63‑ball FBGA (9.0 × 11.0 mm) provides a small footprint and consistent pinout across series densities for design scalability.
• Series scalability & pinout compatibility: Pinout compatibility across densities simplifies migration within the Jeju Semiconductor NAND family.

Why Choose JS27HP8G08SDDA-45?

The JS27HP8G08SDDA-45 targets designs that need a balance of capacity, endurance and industrial robustness. With SLC NAND architecture, 4‑bit ECC, and a 2K page plus 128‑byte spare arrangement, it provides a resilient non‑volatile storage option for embedded and mass‑storage applications operating at 1.8 V.

Its compact 63‑FBGA package, pinout compatibility across densities, and RoHS compliance make it suitable for space‑constrained, long‑life deployments where data integrity and endurance are priorities.

Request a quote or submit an RFQ to get pricing and availability for JS27HP8G08SDDA-45 and to discuss volume options or sample requests with the product team.