Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 1,408
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
N/AJS27HU1G08SCDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,637
N/AJS27HU2G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
746
N/AJS27HU2G08SDDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
574
N/AJS27HU4G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,471
N/AJS27HU4G08SDDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,550
N/AJS27HU8G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,223
N/AJS27HU8G08SJDA-25Jeju Semiconductor Corporation2K page 1-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,706
N/AJS27HU8G08SKDA-25Jeju Semiconductor Corporation2K page 1-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
840
N/AN/AKGD-128Mbx8-SLC-NAND-Flash,-x8,-1.8V/3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
587
N/AN/AKGD-256Mbx8-SLC-NAND-Flash,-x8,-1.8V/3.3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
1,947
N/AN/AKGD-512Mbx8-SLC-NAND-Flash,-x8,-1.8V/-3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
790
M30LW128D110N6M30LW128D110N6STMicroelectronicsIC FLASH 128MBIT PARALLEL 56TSOPFlash Memory56-TSOP2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
110 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8M x 8 x 2, 4M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
56-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
110 ns
1,981
M30LW128D110ZA6M30LW128D110ZA6STMicroelectronicsIC FLASH 128MBIT PARALLEL 64TBGAFlash Memory64-TBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
110 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8M x 8 x 2, 4M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-TBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
110 ns
929
MT28F128J3BS-12 ETMT28F128J3BS-12 ETMicron Technology Inc.IC FLASH 128MBIT PARALLEL 64FBGAFlash Memory64-FBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
120 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8, 8M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-FBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
532
MT28F128J3BS-12 ET TRMT28F128J3BS-12 ET TRMicron Technology Inc.IC FLASH 128MBIT PARALLEL 64FBGAFlash Memory64-FBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
120 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8, 8M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-FBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
620
MT28F128J3BS-12 METMT28F128J3BS-12 METMicron Technology Inc.IC FLASH 128MBIT PARALLEL 64FBGAFlash Memory64-FBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
120 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8, 8M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-FBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
467
MT28F128J3BS-12 MET TRMT28F128J3BS-12 MET TRMicron Technology Inc.IC FLASH 128MBIT PARALLEL 64FBGAFlash Memory64-FBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
120 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8, 8M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-FBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
712
MT28F128J3FS-12 ET TRMT28F128J3FS-12 ET TRMicron Technology Inc.IC FLASH 128MBIT PARALLEL 64FBGAFlash Memory64-FBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
120 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8, 8M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-FBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
536
MT28F128J3FS-12 METMT28F128J3FS-12 METMicron Technology Inc.IC FLASH 128MBIT PARALLEL 64FBGAFlash Memory64-FBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
120 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8, 8M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-FBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
313
MT28F128J3FS-12 MET TRMT28F128J3FS-12 MET TRMicron Technology Inc.IC FLASH 128MBIT PARALLEL 64FBGAFlash Memory64-FBGA (10x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
120 ns
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
16M x 8, 8M x 16
Memory Size:
128 Mbit
Memory Type:
Non-Volatile
Packaging:
64-FBGA
Qualification:
N/A
Technology:
FLASH
Write Cycle Time Word Page:
N/A
668

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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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