10,000+ Happy Customers
20+ Years in Business
75,000+ SKUs in Stock
80+ Authorized Manufacturers
Helping Tech Companies Create What’s Next!
phoneCall +1.949.783.7300
GET A
QUOTE

Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

Part Search

CLEAR SEARCH
Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
MT29F512G08CUCABH3-10RZ:A TRN/AMT29F512G08CUCABH3-10RZ:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 100LBGAFlash Memory100-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
904
GET A
QUOTE
MT29F512G08CUCABH3-10Z:AN/AMT29F512G08CUCABH3-10Z:AMicron Technology Inc.IC FLASH 512GBIT PAR 100LBGAFlash Memory100-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
129
GET A
QUOTE
MT29F512G08CUCABH3-10Z:A TRN/AMT29F512G08CUCABH3-10Z:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 100LBGAFlash Memory100-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,963
GET A
QUOTE
MT29F512G08CUCABH3-12:AN/AMT29F512G08CUCABH3-12:AMicron Technology Inc.IC FLASH 512GBIT PAR 100LBGAFlash Memory100-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
389
GET A
QUOTE
MT29F512G08CUCABH3-12ITZ:AN/AMT29F512G08CUCABH3-12ITZ:AMicron Technology Inc.IC FLASH 512GBIT PAR 100LBGAFlash Memory100-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
94
GET A
QUOTE
MT29F512G08CUCABH3-12ITZ:A TRN/AMT29F512G08CUCABH3-12ITZ:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 100LBGAFlash Memory100-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
100-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
102
GET A
QUOTE
MT29F512G08CUCABJ3-10RZ:AN/AMT29F512G08CUCABJ3-10RZ:AMicron Technology Inc.IC FLASH 512GBIT PAR 132LBGAFlash Memory132-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,036
GET A
QUOTE
MT29F512G08CUCABJ3-10RZ:A TRN/AMT29F512G08CUCABJ3-10RZ:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 132LBGAFlash Memory132-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,887
GET A
QUOTE
MT29F512G08CUCDBJ6-6R:DN/AMT29F512G08CUCDBJ6-6R:DMicron Technology Inc.IC FLASH 512GBIT PAR 132LBGAFlash Memory132-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
166 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
582
GET A
QUOTE
MT29F512G08CUCDBJ6-6R:D TRN/AMT29F512G08CUCDBJ6-6R:D TRMicron Technology Inc.IC FLASH 512GBIT PAR 132LBGAFlash Memory132-LBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
166 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
523
GET A
QUOTE
N/AN/AMT29F512G08EBHAFB17A3WC1-FESMicron Technology Inc.IC FLASH 512GBIT PARALLEL DIEFlash MemoryDie2.5V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
255
GET A
QUOTE
N/AN/AMT29F512G08EBHAFB17A3WC1-RMicron Technology Inc.IC FLASH 512GBIT PARALLEL DIEFlash MemoryDie2.5V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
176
GET A
QUOTE
MT29F512G08EBHAFJ4-3ITF:A TRN/AMT29F512G08EBHAFJ4-3ITF:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
342
GET A
QUOTE
MT29F512G08EBHAFJ4-3ITFES:A TRN/AMT29F512G08EBHAFJ4-3ITFES:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
276
GET A
QUOTE
MT29F512G08EBHAFJ4-3R:AN/AMT29F512G08EBHAFJ4-3R:AMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
369
GET A
QUOTE
MT29F512G08EBHAFJ4-3R:A TRN/AMT29F512G08EBHAFJ4-3R:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,821
GET A
QUOTE
MT29F512G08EBHAFJ4-3T:AN/AMT29F512G08EBHAFJ4-3T:AMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,291
GET A
QUOTE
MT29F512G08EBHAFJ4-3T:A TRN/AMT29F512G08EBHAFJ4-3T:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
518
GET A
QUOTE
MT29F512G08EBHBFJ4-R:BN/AMT29F512G08EBHBFJ4-R:BMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
992
GET A
QUOTE
MT29F512G08EBHBFJ4-R:B TRN/AMT29F512G08EBHBFJ4-R:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,304
GET A
QUOTE

Featured Brands

About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

We’ve Got You Covered!

If you can’t find the parts you’re looking for in our database, don’t worry! We’re here to help. Simply fill out the form below with the part number you need and your contact information, and we’ll locate it for you. If you prefer to speak to someone directly, our sales team is available at 949.783.7300.

























    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.


























      I agree to receive newsletters and promotional emails. I can unsubscribe at any time.


      See What We Have to Offer!

      keyboard_arrow_up