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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

Part Search

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
MT29F512G08EBHBFJ4-T:BN/AMT29F512G08EBHBFJ4-T:BMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,174
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QUOTE
MT29F512G08EBHBFJ4-T:B TRN/AMT29F512G08EBHBFJ4-T:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
73
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QUOTE
MT29F512G08EBLCEJ4-R:CN/AMT29F512G08EBLCEJ4-R:CMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.6V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,734
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QUOTE
MT29F512G08EBLCEJ4-R:C TRN/AMT29F512G08EBLCEJ4-R:C TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.6V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
178
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QUOTE
N/AN/AMT29F512G08EBLEEB47R3WC1-MMicron Technology Inc.IC FLASH 512GBIT DIEFlash MemoryDieN/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
N/A
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,832
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QUOTE
N/AN/AMT29F512G08EBLEEB47R3WC1-RMicron Technology Inc.IC FLASH 512GBIT DIEFlash MemoryDieN/AN/A
Access Time:
N/A
Clock Frequency:
N/A
Grade:
N/A
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
N/A
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
485
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QUOTE
MT29F512G08EBLEEJ4-R:EN/AMT29F512G08EBLEEJ4-R:EMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.6V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,427
GET A
QUOTE
MT29F512G08EBLEEJ4-R:E TRN/AMT29F512G08EBLEEJ4-R:E TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.6V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
242
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QUOTE
MT29F512G08EBLEEJ4-T:EN/AMT29F512G08EBLEEJ4-T:EMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.6V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
491
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QUOTE
MT29F512G08EBLEEJ4-T:E TRN/AMT29F512G08EBLEEJ4-T:E TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.6V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,987
GET A
QUOTE
MT29F512G08EECAGJ4-5M:AN/AMT29F512G08EECAGJ4-5M:AMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
120
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QUOTE
MT29F512G08EEHAFJ4-3R:AN/AMT29F512G08EEHAFJ4-3R:AMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,142
GET A
QUOTE
MT29F512G08EEHAFJ4-3R:A TRN/AMT29F512G08EEHAFJ4-3R:A TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
727
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QUOTE
MT29F512G08EMCBBJ5-10ES:B TRN/AMT29F512G08EMCBBJ5-10ES:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 132TBGAFlash Memory132-TBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,487
GET A
QUOTE
MT29F512G08EMCBBJ5-6:B.001N/AMT29F512G08EMCBBJ5-6:B.001Micron Technology Inc.IC FLASH 512GBIT PAR 132TBGAFlash Memory132-TBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
167 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,579
GET A
QUOTE
MT29F64G08ABCBBH6-6:B TRN/AMT29F64G08ABCBBH6-6:B TRMicron Technology Inc.IC FLASH 64GBIT PARALLEL 152VBGAFlash Memory152-VBGA (14x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
167 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
152-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
670
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QUOTE
MT29F64G08ABCBBH6-6IT:BN/AMT29F64G08ABCBBH6-6IT:BMicron Technology Inc.IC FLASH 64GBIT PARALLEL 152VBGAFlash Memory152-VBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
167 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
152-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
433
GET A
QUOTE
MT29F64G08ABCBBH6-6IT:B TRN/AMT29F64G08ABCBBH6-6IT:B TRMicron Technology Inc.IC FLASH 64GBIT PARALLEL 152VBGAFlash Memory152-VBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
167 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
152-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
493
GET A
QUOTE
MT29F64G08ABEBBH6-12:BN/AMT29F64G08ABEBBH6-12:BMicron Technology Inc.IC FLASH 64GBIT PARALLEL 152VBGAFlash Memory152-VBGA (14x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
152-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
129
GET A
QUOTE
MT29F64G08ABEBBH6-12:B TRN/AMT29F64G08ABEBBH6-12:B TRMicron Technology Inc.IC FLASH 64GBIT PARALLEL 152VBGAFlash Memory152-VBGA (14x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
152-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
757
GET A
QUOTE

Featured Brands

About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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