Suntsu’s MCP (Multi-Chip Package) memory catalog offers compact, high-density storage solutions by combining various memory technologies, such as NAND flash and DRAM, into a single, space-saving package. These integrated circuits are ideal for applications where space is limited, including IoT devices, medical electronics, wearables, and mobile computing. They optimize board space and power efficiency without compromising performance. Use our advanced part search tool to filter by memory combination, capacity, and technical specifications to find the right MCP solution for your needs.
MCP Memory
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | N/A | FM62D2G1GXA (2U) | ESMT | 2Gb NAND+LPDDR2 MCP | MCP Memory | 10.5x8 (mm),162ball | 2.5V | 0°C – 70°C | Memory Size: 2 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile, Non-Volatile Memory Format: MCP Technology: MCP (NAND + DRAM) Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 10.5x8 (mm),162ball | 1,212 | |
| N/A | N/A | FM6BD1G12MB(2W) | ESMT | 1Gb NAND+LPDDR2 MCP Ind. | MCP Memory | 10.5x8 (mm),162ball | 2.5V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile, Non-Volatile Memory Format: MCP Technology: MCP (NAND + DRAM) Memory Organization: 32M x 16 Memory Interface: Parallel Grade: Industrial Qualification: N/A Packaging: 10.5x8 (mm),162ball | 1,116 | |
| N/A | N/A | FM6BD2G2GKA (2Q) | ESMT | 2Gb NAND+LPDDR2 MCP | MCP Memory | 10.5x8 (mm),162ball | 2.5V | 0°C – 70°C | Memory Size: 2 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile, Non-Volatile Memory Format: MCP Technology: MCP (NAND + DRAM) Memory Organization: 64M x 32 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 10.5x8 (mm),162ball | 711 | |
| N/A | N/A | FM6BD4G2GKA (2J) | ESMT | 4Gb NAND+LPDDR2 MCP | MCP Memory | 10.5x8 (mm),162ball | 2.5V | 0°C – 70°C | Memory Size: 4 Gbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile, Non-Volatile Memory Format: MCP Technology: MCP (NAND + DRAM) Memory Organization: 64M x 32 Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 10.5x8 (mm),162ball | 724 | |
| N/A | N/A | FM6HZ4G4GKA (2R) | ESMT | 4Gb NAND+LPDDR4x MCP Ind. | MCP Memory | 9.5x8 (mm),149ball | 2.5V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile, Non-Volatile Memory Format: MCP Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Industrial Qualification: N/A Packaging: 9.5x8 (mm),149ball | 552 | |
| N/A | N/A | FM6HZ4G8GXDZB (2H) | ESMT | 4Gb NAND+LPDDR4x MCP Ind. | MCP Memory | 9.5x8 (mm),149ball | 2.5V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile, Non-Volatile Memory Format: MCP Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 x 2 die Memory Interface: Parallel Grade: Industrial Qualification: N/A Packaging: 9.5x8 (mm),149ball | 993 | |
| N/A | N/A | FM6HZ8G8GXDZB(2H) | ESMT | 8Gb NAND+LPDDR4x MCP | MCP Memory | 9.5x8 (mm),149ball | 2.5V | 0°C – 70°C | Memory Size: 8 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 15 ns Access Time: N/A Memory Type: Volatile, Non-Volatile Memory Format: MCP Technology: MCP (NAND + DRAM) Memory Organization: 256M x 16 x 2 die Memory Interface: Parallel Grade: Commercial Qualification: N/A Packaging: 9.5x8 (mm),149ball | 584 |
About MCP Memory
Multi-Chip Package (MCP) memory is an advanced, space-saving storage solution that vertically stacks multiple memory chips, such as high-density NAND flash and low-power DRAM, into a single, compact semiconductor package. By combining volatile and non-volatile memory technologies onto a shared substrate, MCPs significantly reduce the physical footprint on the printed circuit board (PCB). This makes them ideal for high-performance applications where space is limited, as well as for situations where maximizing board space and minimizing trace lengths are crucial for system efficiency.
Engineers and hardware designers use MCP memory to streamline complex routing, reduce power consumption, and ensure high-speed data transfer between the processing unit and the memory subsystem. These highly integrated devices are commonly found in compact embedded systems, IoT gateways, rugged industrial telemetry, and automotive subassemblies. Suntsu’s range of MCP memory options offers a dependable and efficient architecture that provides both fast execution space and permanent data storage, making it an ideal match for modern microcontrollers and dense digital logic designs.
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