 | | IS42S32160A-75B-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 305 | |
 | | IS42S32160A-75BI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 831 | |
 | | IS42S32160A-75BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,842 | |
 | | IS42S32160A-75BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 156 | |
 | | IS42S32160A-75BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,528 | |
 | | IS42S32160B-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,937 | |
 | | IS42S32160B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,219 | |
 | | IS42S32160B-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 474 | |
 | | IS42S32160B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 357 | |
 | | IS42S32160B-75BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,074 | |
 | | IS42S32160B-75EBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 751 | |
 | | IS42S32160B-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | DRAM Memory | 90-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 926 | |
 | | IS42S32160B-75ETLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,184 | |
 | | IS42S32160B-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 952 | |
 | | IS42S32160B-75TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 174 | |
 | | IS42S32160B-75TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 163 | |
 | | IS42S32160B-75TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 841 | |
 | | IS42S32160B-75TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 581 | |
 | | IS42S32160B-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 591 | |
 | | IS42S32160B-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (13x11) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,959 | |