 | | IS42S32800D-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 640 | |
 | | IS42S32800D-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 159 | |
 | | IS42S32800D-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,042 | |
 | | IS42S32800D-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 59 | |
 | | IS42S32800D-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 561 | |
 | | IS42S32800D-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,010 | |
 | | IS42S32800D-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 293 | |
 | | IS42S32800D-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 350 | |
 | | IS42S32800D-75EB-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 710 | |
 | | IS42S32800D-75EBI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 173 | |
 | | IS42S32800D-75EBI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,030 | |
 | | IS42S32800D-75EBL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,443 | |
 | | IS42S32800D-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 153 | |
 | | IS42S32800D-75EBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 990 | |
 | | IS42S32800D-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 575 | |
 | | IS42S32800D-75ETL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,703 | |
 | | IS42S32800D-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,067 | |
 | | IS42S32800D-75ETLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,551 | |
 | | IS42S32800D-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 632 | |
 | | IS42S32800D-7BI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 574 | |