IS42S32800D-6BL-TR

The IS42S32800D-6BL-TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with a parallel interface and quad-bank architecture (2M × 32 × 4 banks). It implements a fully synchronous pipeline architecture with all signals referenced to the rising edge of the clock.

Designed for systems requiring high-speed synchronous memory, the device offers programmable burst modes, selectable CAS latencies, and built-in refresh and power-saving modes to support a range of memory subsystem requirements within a 90-ball TF-BGA (8×13) package.

Key Features

• Memory Core  256 Mbit SDRAM organized as 8M × 32 (internally 2M × 32 × 4 banks) for parallel memory subsystems.
• Synchronous Pipeline Architecture  Fully synchronous operation with all signals referenced to the positive clock edge for deterministic timing.
• Clock Performance  Supports up to 166 MHz clock frequency (CL=3) with access time as low as 5.4 ns (CAS Latency = 3 at −6 speed grade).
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); selectable CAS latency (2 or 3 clocks).
• Refresh and Power Management  Auto Refresh, Self Refresh and power-down modes; supports 4096 refresh cycles per refresh interval depending on grade.
• Interface and Logic Levels  LVTTL-compatible interface for control signals and standard SDRAM command set including auto-precharge and burst termination.
• Supply and Package  Single 3.3 V supply (3.3 V ±0.3 V; 3.0–3.6 V range) in a 90-TFBGA (8×13) package for compact board integration.
• Operating Temperature  Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• System Memory  Used as parallel SDRAM in memory subsystems that require a 256 Mbit synchronous DRAM with burst and banked access.
• High-Speed Buffering  Suitable for buffering and temporary storage where synchronous burst transfer and programmable CAS latency are required.
• Compact Board Designs  TF-BGA (90-ball, 8×13) package supports dense PCB layouts where board space and signal routing are constrained.

Unique Advantages

• High Clock-Rate Capability: Supports 166 MHz operation (CL=3), enabling faster synchronous transfers when required by system timing.
• Flexible Burst Control: Programmable burst lengths and sequence options allow tuning of transfer patterns to match system read/write behavior.
• Banked Architecture: Internal quad-bank organization helps hide row access and precharge latency through bank interleaving.
• Integrated Power-Save Modes: Auto Refresh, Self Refresh, and power-down reduce power consumption during idle or low-activity periods.
• Compact, Industry-Standard Package: 90-TFBGA (8×13) provides a dense, surface-mount footprint for space-constrained assemblies.
• Deterministic Timing: LVTTL interface with fully synchronous signaling simplifies timing closure for clock-referenced designs.

Why Choose IS42S32800D-6BL-TR?

The IS42S32800D-6BL-TR delivers a balanced combination of synchronous performance and flexible memory controls in a compact 90-TFBGA package. Its 8M × 32 organization, programmable burst and CAS options, and quad-bank architecture make it suitable for designs that need predictable, clock-referenced memory behavior at up to 166 MHz.

Engineers specifying 256 Mbit SDRAM for commercial-temperature applications will find the IS42S32800D-6BL-TR provides the timing options, refresh capabilities, and power-management modes needed to integrate into parallel memory subsystems with compact PCB footprints.

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