IS42S32800D-6TL

The IS42S32800D-6TL is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with an internal quad-bank architecture (2M × 32 × 4 banks). It implements a fully synchronous, pipelined interface with LVTTL-compatible inputs and supports high-rate, burst-style data transfers.

This device is targeted at designs requiring parallel SDRAM memory with programmable burst and latency options, offering a 3.0–3.6V supply range, an 86-pin TSOP-II package, and commercial operating temperature support (0°C to +70°C).

Key Features

• Memory Architecture  Organized as 8M × 32 (2M × 32 × 4 banks) for a total of 256Mbit; internal bank structure enables bank interleaving and hidden row precharge.
• Performance  Clock frequency up to 166 MHz (CAS latency = 3); access time from clock as low as 5.4 ns at CAS latency = 3.
• Programmable Burst and CAS  Programmable burst lengths of 1, 2, 4, 8, and full page with selectable sequential or interleave burst sequence; programmable CAS latency of 2 or 3 clocks.
• Refresh and Power Modes  Supports Auto Refresh (CBR) and Self Refresh; refresh options include 4096 cycles per 16 ms (A2 grade) or 4096 cycles per 64 ms (Commercial/Industrial/A1 grades).
• Interface and Signaling  Fully synchronous operation with all signals referenced to the rising edge of CLK; LVTTL-compatible inputs for command and address signals.
• Supply and Thermal  Single-supply operation within 3.0 V to 3.6 V; specified commercial operating temperature range of 0°C to +70°C (TA).
• Package  Supplied in an 86-pin TSOP-II (86-TFSOP) package with a 0.400" (10.16 mm) body width, suitable for surface-mount assembly.

Typical Applications

• Parallel SDRAM subsystems  Use as a 256Mbit synchronous DRAM device where a parallel SDRAM interface and programmable burst behavior are required.
• High-speed buffering  Suitable for designs that need pipelined, burstable memory accesses at clock rates up to 166 MHz with programmable CAS latency.
• Commercial electronic equipment  Intended for systems operating within the specified commercial temperature range (0°C to +70°C) and 3.0–3.6V supply window.

Unique Advantages

• Quad-bank architecture: Enables bank interleaving to hide row precharge latency and maintain continuous data streams during burst accesses.
• Programmable timing and burst control: CAS latency (2 or 3) and multiple burst lengths/sequences let designers tune performance to system timing.
• High clock-rate capability: Supports operation at up to 166 MHz (CAS latency = 3), delivering low access time (5.4 ns from clock) for time-sensitive reads.
• Comprehensive refresh modes: Auto Refresh and Self Refresh support with configurable refresh intervals for different grade options.
• Standard TSOP-II packaging: 86-pin TSOP-II (0.400", 10.16 mm) provides a proven form factor for surface-mount assembly and board-level integration.
• LVTTL-compatible interface: Registered inputs referenced to CLK simplify timing closure with common logic families.

Why Choose IS42S32800D-6TL?

The IS42S32800D-6TL combines a 256Mbit synchronous DRAM core with programmable latency and burst control, a quad-bank internal organization, and high-rate clock operation to support designs requiring pipelined, parallel memory access. Its LVTTL interface and single-supply operation (3.0–3.6V) make it suitable for systems that need deterministic, burstable DRAM behavior in an 86-pin TSOP-II package.

This device is well suited for engineers specifying a verified 256Mbit SDRAM component with flexible timing and refresh options, and for applications that operate within the commercial temperature range. The combination of programmable features and standard packaging helps streamline integration into existing memory subsystems.

For pricing, availability, or to request a formal quote for IS42S32800D-6TL, please submit a quote request or contact the sales team for assistance.