IS42S32800D-6BLI

The IS42S32800D-6BLI is a 256Mbit synchronous DRAM organized as 8M × 32 with a quad-bank architecture and pipeline synchronous interface. It is designed for high-speed parallel memory applications requiring a 3.3V supply and compact 90-ball TF‑BGA packaging.

This device provides programmable burst operation, internal bank interleaving and self-timed precharge to support high-rate data transfers and flexible timing management in systems operating across a wide ambient range.

Key Features

• Memory Core & Organization 256 Mbit DRAM organized as 8M × 32 (2M × 32 × 4 banks) to support wide parallel data paths and bank interleaving.
• Performance Supports clock frequencies up to 166 MHz (CAS latency = 3) with an access time from clock of 5.4 ns (CAS = 3), enabling high-speed synchronous operation.
• Interface Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL‑compatible inputs for parallel memory interfaces.
• Burst Control & Timing Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks); burst termination via burst stop and precharge commands.
• Refresh & Power Management Auto Refresh (CBR) and Self Refresh supported; refresh options documented with 4K refresh cycles per 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade). Includes power‑down mode for reduced power consumption.
• Power Single power supply: 3.3 V ±0.3 V (3.0 V–3.6 V) compatible with standard 3.3 V memory systems.
• Package & Temperature Available in a 90‑TFBGA (8×13) package; specified operating ambient temperature −40°C to +85°C (TA).
• System Behavior Internal bank architecture and self-timed row precharge allow interleaving between banks to hide row access/precharge latency and support random column address changes during burst access.

Typical Applications

• Parallel memory subsystems — Provides 256 Mbit synchronous DRAM capacity and parallel interface for designs that require wide data paths and predictable timing.
• Embedded systems and controllers — Offers programmable burst and CAS timing to match system memory timing requirements in compact BGA footprint.
• High-speed buffering — Quad-bank architecture and burst capabilities enable efficient buffering and high-rate data transfers within a 3.3 V memory environment.

Unique Advantages

• Quad-bank architecture: Internal bank interleaving hides row access/precharge time and supports random column address changes during bursts.
• Flexible timing control: Programmable CAS latency (2 or 3 clocks) and multiple burst lengths/sequences let designers tune throughput and latency to system needs.
• High-frequency operation: Specifies operation up to 166 MHz (CAS = 3) with a 5.4 ns access time from clock for high-rate synchronous transfers.
• Compact BGA package: 90‑TFBGA (8×13) offers a small board footprint for space-constrained designs requiring 256 Mbit DRAM capacity.
• Robust refresh and power modes: Auto and self-refresh plus documented refresh-cycle options support power management and data retention strategies.
• Standard 3.3 V supply: Operates on a single 3.3 V supply (3.0 V–3.6 V), simplifying integration into common memory power domains.

Why Choose IS42S32800D-6BLI?

The IS42S32800D-6BLI combines a 256 Mbit synchronous DRAM core with programmable timing, burst control and internal bank architecture to deliver a flexible high‑speed parallel memory solution in a compact 90‑TFBGA package. Its documented timing, refresh modes and LVTTL interface make it suitable for designs that require deterministic synchronous behavior and configurable data-transfer profiles.

This device is well suited for engineers specifying 3.3 V SDRAM capacity with extended ambient operation (−40°C to +85°C) who need programmable latency, burst options and bank interleaving to optimize throughput and board space. The IS42S32800D-6BLI provides a clear, specification-driven option for systems requiring 256 Mbit parallel SDRAM.

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