IS42S32800D-6BI

The IS42S32800D-6BI is a 256Mbit synchronous DRAM organized as 8M × 32 with a quad-bank architecture and a parallel memory interface. It provides synchronous pipeline operation for high-speed burst access in systems requiring 256 Mbit of volatile SDRAM.

Designed for systems operating from a 3.0 V to 3.6 V supply and an ambient temperature range of -40°C to +85°C (TA), the device targets applications that require predictable timing, programmable burst control and standard LVTTL signaling.

Key Features

• Memory Core: 256 Mbit SDRAM organized as 8M × 32 (2M × 32 × 4 banks), enabling quad-bank operation and interleaved bank access.
• Performance: Supports clock frequencies up to 166 MHz with CAS latency options of 2 or 3 clocks; typical access time from clock is 5.4 ns (CAS latency = 3).
• Burst and Sequencing: Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Power Modes: Auto Refresh, Self Refresh and power-down capability; refresh options include 4096 refresh cycles per 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade).
• Interface and Signaling: Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL-compatible inputs/outputs.
• Power: Single power supply operation at 3.3 V ± 0.3 V (listed supply range 3.0 V to 3.6 V).
• Package & Mounting: 90-ball TF-BGA package (90-TFBGA, 8 × 13) suitable for compact board designs.
• Operating Range: Specified ambient operating temperature range of -40°C to +85°C (TA).

Typical Applications

• Embedded Systems: Provides 256 Mbit of synchronous DRAM for embedded platforms that require predictable burst transfers and LVTTL signaling.
• High-Speed Buffering: Suitable for designs needing parallel SDRAM for burst read/write buffering where clocked, synchronous access and programmable burst lengths improve throughput.
• Industrial Electronics: With an operating temperature range to -40°C, the device fits industrial applications that require reliable volatile memory within that thermal window.

Unique Advantages

• Quad-Bank Architecture: Four internal banks (2M × 32 × 4) enable bank interleaving to hide row precharge time and improve sustained data throughput.
• Flexible Burst Control: Programmable burst lengths and sequence modes allow tailoring of transfers to system timing and access patterns.
• Synchronous, Clocked Operation: All signals referenced to the rising clock edge provide deterministic timing and alignment for pipeline memory systems.
• Wide Supply Compatibility: Operates from 3.0 V to 3.6 V (typical 3.3 V ±0.3 V), matching common 3.3 V system rails.
• Compact BGA Footprint: 90-TFBGA (8×13) package minimizes board area while providing a dense ball-grid interconnect.
• Refresh Options: Selectable refresh timing (16 ms or 64 ms variants per grade) supports different system refresh strategies and product grades.

Why Choose IC DRAM 256MBIT PAR 90TFBGA?

The IS42S32800D-6BI delivers synchronous SDRAM functionality with programmable burst modes, selectable CAS latency, and quad-bank organization for designs that require predictable, clocked parallel memory transfers. Its support for up to 166 MHz operation and documented access timing (5.4 ns at CL=3) makes it suitable for systems that require well-defined timing behavior.

Targeted at engineers and procurement teams needing a 256 Mbit parallel SDRAM in a compact 90-TFBGA package, the device provides a combination of flexible burst control, standard LVTTL interfacing, and an operating range from -40°C to +85°C, supporting a variety of embedded and industrial applications.

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