IS42S32800D-6B

The IS42S32800D-6B is a 256Mbit synchronous DRAM organized as 8M × 32 with an internal quad-bank architecture (2M × 32 × 4 banks). It operates from a single 3.3V supply (3.0V–3.6V) and uses a fully synchronous, positive-edge clocked interface to support high-speed burst transfers and random column access every clock cycle.

This device targets 3.3V memory systems that require programmable burst operation, selectable CAS latency, and standard 90-ball TF‑BGA packaging for compact board-level integration.

Key Features

• Memory Organization and Capacity  256 Mbit SDRAM configured as 8M × 32 and internally arranged as 2M × 32 × 4 banks for bank interleaving and parallel access.
• Synchronous Interface  Fully synchronous operation with all signals referenced to the rising edge of the clock and LVTTL-compatible inputs/outputs.
• Clock and Timing  Supports up to 166 MHz clock frequency (CAS latency = 3) with an access time from clock of 5.4 ns at CL=3 and programmable CAS latency options (2 or 3 clocks).
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave), plus burst read/write and burst read/single write modes with burst termination options.
• Refresh and Power Modes  Auto Refresh and Self Refresh supported; refresh rate options include 4K refresh cycles in 16 ms (A2 grade) or 64 ms (commercial/A1/industrial options noted in datasheet).
• Power Supply  Single power supply operation at 3.3V ±0.3V (specified 3.0V–3.6V).
• Package and Mounting  Supplied in a 90‑ball TF‑BGA (8 × 13) package for compact, surface-mounted memory implementations.
• Operating Temperature  Commercial operating range specified at 0°C to +70°C (TA) for this part.

Typical Applications

• High‑speed memory subsystems  For designs requiring synchronous DRAM with programmable burst lengths and bank interleaving to maximize throughput.
• Systems with tight board area  The 90‑ball TF‑BGA package enables compact PCB layouts where board space and signal integrity matter.
• Low-latency data buffering  With CAS latency options and 166 MHz operation, suited for applications needing deterministic, low-latency access patterns.

Unique Advantages

• Quad‑bank architecture: Enables internal bank interleaving to hide precharge time and sustain higher sustained data rates.
• Programmable burst control: Selectable burst lengths and sequences provide design flexibility for a variety of memory access patterns.
• High clock-rate option: 166 MHz operation (CL=3) with a 5.4 ns access time from clock supports demanding synchronous memory timing.
• Standard 3.3V supply: Single VDD at 3.3V ±0.3V simplifies power rail design in legacy 3.3V systems.
• Compact TF‑BGA package: 90‑ball TF‑BGA (8×13) reduces PCB footprint while providing a robust surface-mount form factor.
• Refresh and power management: Auto Refresh and Self Refresh support help maintain data integrity and reduce power during idle periods.

Why Choose IC DRAM 256MBIT PAR 90TFBGA?

The IS42S32800D-6B provides a verified 256Mbit SDRAM building block for 3.3V systems that require synchronous burst operation, selectable CAS latency, and quad-bank performance. Its combination of 166 MHz clock capability, programmable burst features, and compact 90‑ball TF‑BGA package make it suitable for designs where throughput, timing flexibility, and board-area efficiency are priorities.

This device is appropriate for engineers specifying standard commercial-temperature synchronous DRAM in applications that rely on predictable timing, bank interleaving, and industry-standard LVTTL signaling.

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