IS42S32800B-7TL

The IS42S32800B-7TL is a 256‑Mbit synchronous DRAM organized as 8M × 32 with four internal banks (2M × 32 × 4 banks). It implements a fully synchronous, pipelined architecture with a parallel LVTTL interface for systems that require predictable, high‑bandwidth memory access.

Typical use cases include designs requiring configurable burst transfers, low‑latency operation, and standard 3.3 V power supply operation. Key value propositions include selectable CAS latency, multiple burst length options, and support for auto and self refresh for power management.

Key Features

• Core Memory Architecture Organized as 8M × 32 (four internal banks of 2M × 32 bits), providing a total density of 256 Mbit in a single device.
• SDRAM Technology Fully synchronous DRAM with internal pipelined architecture; all inputs sampled on the positive edge of CLK.
• Clock and Timing Supports clock rates of 166 MHz and 143 MHz with an access time of 5.5 ns and CAS latency selectable at 2 or 3.
• Burst and Mode Control Programmable mode register with burst length options of 1, 2, 4, 8, or full page and burst type selectable as interleaved or linear; Burst‑Read/Single‑Write supported.
• Byte Control and Data Masking Individual byte control via DQM0–DQM3 for selective masking of data bytes during transfers.
• Refresh and Low‑Power Functions Auto Refresh and Self Refresh supported; 4096 refresh cycles/64 ms (15.6 μs/row), with 4096/32 ms specified for industrial grade devices.
• Voltage and Interface Single +3.3 V ±0.3 V supply (3.0–3.6 V) with LVTTL compatible command and data interface.
• Package and Temperature Available in an 86‑pin TSOP‑II package (86‑TFSOP, 0.400" / 10.16 mm width); operating temperature range 0 °C to 70 °C (TA).

Typical Applications

• High‑bandwidth embedded systems Provides substantial DRAM density and burstable transfers for applications that require sustained memory throughput.
• Systems requiring low‑latency access Selectable CAS latency (2 or 3) and pipelined architecture enable optimization for latency‑sensitive designs.
• Designs needing configurable burst transfers Programmable burst lengths and burst type selection allow tailoring of memory access patterns to system requirements.
• Standard 3.3 V memory subsystems Ideal where a single +3.3 V supply and LVTTL interface are required, with an 86‑pin TSOP‑II footprint.

Unique Advantages

• High effective density: 256 Mbit organized as 8M × 32 provides substantial on‑board DRAM capacity in a single device.
• Flexible timing and burst control: Selectable CAS latency and multiple burst length/type options enable performance tuning for varied workloads.
• Four internal banks: Banked architecture (2M × 32 × 4) improves concurrent access patterns and overall throughput.
• Byte‑level data control: Individual byte masking via DQM0–DQM3 supports partial‑word write masking and finer data handling.
• Standard power and interface: Operates from a single +3.3 V supply with LVTTL signaling for straightforward integration into existing memory subsystems.
• Refresh and power management: Auto and self refresh modes plus CKE control enable reduced standby power and reliable data retention management.

Why Choose IS42S32800B-7TL?

The IS42S32800B-7TL delivers a balanced combination of density, configurable performance, and standard interface compatibility for designs that require predictable, high‑bandwidth DRAM. Its programmable mode register, selectable CAS latency, and burst options make it suitable for systems where timing and throughput must be tuned to application needs.

Backed by Integrated Silicon Solution, Inc., this 256‑Mbit SDRAM is suited to engineers and procurement teams seeking a proven, parallel SDRAM device in an 86‑pin TSOP‑II package for mainstream operating conditions and a single +3.3 V supply.

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