IS42S32800B-7T

The IS42S32800B-7T is a 256-Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution, Inc. It is organized as quad banks of 2M × 32 bits with a fully synchronous, pipelined architecture optimized for high memory bandwidth applications.

Designed for parallel memory interfaces, the device supports programmable burst lengths and CAS latencies, and includes refresh and power-management features suitable for systems requiring predictable, high-throughput DRAM operation.

Key Features

• Core / Memory Architecture Quad-bank organization: four internal banks configured as 2M × 32 bits × 4 banks (total 256 Mbit).
• Synchronous SDRAM Operation Fully synchronous operation with internal pipelined architecture; clocked operation with documented clock rates of 166/143 MHz and LVTTL interface signaling.
• Programmable Burst and Latency Programmable burst lengths (1, 2, 4, 8, or full page) and CAS latency options of 2 or 3 to match system timing and throughput requirements.
• Burst and Data Control Burst type selectable (interleaved or linear), burst-read-single-write mode, burst stop function, and individual byte control via DQM0–DQM3.
• Refresh and Power Management Supports Auto Refresh and Self Refresh; standard refresh requirement of 4096 cycles/64 ms and provision for 4096 cycles/32 ms in industrial-grade operation.
• Voltage and Temperature Single supply operation at +3.3 V (specified 3.0 V to 3.6 V) and an operating temperature range of 0 °C to 70 °C (TA).
• Package Options Available in an 86-pin TSOP-II package (86-TFSOP, 0.400" / 10.16 mm width) with Pb-free package option noted in documentation.

Typical Applications

• High-Bandwidth Memory Systems — Suitable for designs requiring sustained memory throughput, leveraging its synchronous pipelined architecture and burst modes.
• Parallel-Interface DRAM Designs — Use where a parallel SDRAM interface with byte masking (DQM0–DQM3) and programmable bursts are required.
• System Designs Requiring Flexible Timing — Systems that benefit from selectable CAS latency (2 or 3) and multiple burst-length options to tune performance.

Unique Advantages

• Quad-Bank Organization: Four internal banks (2M × 32 × 4) provide a structured memory map for high-density applications.
• Flexible Burst and Latency Settings: Programmable burst lengths and CAS latency options enable designers to balance latency and throughput per application needs.
• Pipelined, Fully Synchronous Operation: Registered sampling on the clock edge and an internal pipeline support predictable timing and system-level integration.
• Byte-Level Data Control: Individual byte control via DQM0–DQM3 allows selective masking and improves data handling in multi-byte transfers.
• Comprehensive Refresh Support: Auto and Self Refresh modes with documented refresh cycle requirements enable implementation of standard memory retention strategies.
• Standard Voltage and Commercial Temperature: Operates from 3.0 V to 3.6 V and across 0 °C to 70 °C, matching common commercial system requirements.

Why Choose IS42S32800B-7T?

The IS42S32800B-7T positions itself as a straightforward, high-density SDRAM solution for applications that require synchronous, parallel memory with flexible burst behavior and byte masking. Its quad-bank 2M × 32 organization, programmable mode register, and support for CAS latencies 2 or 3 make it suitable for designs where configurable timing and sustained bandwidth are important.

With a +3.3 V supply range, commercial operating temperature rating, and standard 86-pin TSOP-II packaging (with Pb-free options noted), this SDRAM device is appropriate for systems needing a reliable, well-documented memory component from Integrated Silicon Solution, Inc.

Request a quote or submit an inquiry for pricing and availability to evaluate the IS42S32800B-7T for your design needs.