IS42S32800B-7BLI

The IS42S32800B-7BLI is a 256‑Mbit synchronous DRAM (SDRAM) device implemented as a quad 2M × 32 configuration with a fully synchronous, pipelined architecture. It provides programmable burst lengths, CAS latency options, and support for auto/self refresh to deliver controllable, high-throughput memory operation.

This device is intended for designs that require high memory bandwidth and flexible burst and timing modes. Key value propositions include multi‑bank organization for parallelism, byte‑level data masking, and availability in a compact 90‑ball LF‑BGA package with industrial operating temperature support.

Key Features

• Core Architecture Quad-bank organization: four internal banks of 2M × 32 bits (2M words × 32 bits × 4 banks) enabling concurrent operations and internal pipelined operation.
• Memory Capacity & Organization 256 Mbit total memory arranged as 8M × 32 (2M × 32 per bank × 4 banks).
• Performance Clock rate options: 166 MHz / 143 MHz; Access time: 5.5 ns; CAS latency selectable at 2 or 3 for tuning read timing.
• Burst & Transfer Modes Programmable burst lengths of 1, 2, 4, 8, or full page with linear or interleaved burst types and burst‑read/single‑write support plus burst stop and auto precharge options.
• Refresh & Power Management Auto Refresh and Self Refresh supported; 4096 refresh cycles/64 ms (15.6 μs/row) and 4096 refresh cycles/32 ms option for industrial grade operation. Single +3.3 V ±0.3 V supply.
• Byte Control & Interface Individual byte masking via DQM0–DQM3, parallel LVTTL interface, and all inputs sampled on the positive edge of CLK.
• Package & Temperature 90‑ball LF‑BGA (8 × 13, 0.8 mm ball pitch) with operating temperature range −40 °C to 85 °C (TA).

Typical Applications

• High‑bandwidth memory subsystems — For systems that require sustained, programmable burst transfers and banked parallel access to support high data throughput.
• Memory expansion modules — As a parallel SDRAM component in designs where 256‑Mbit density and selectable timing/burst options are required.
• Industrial temperature systems — For applications requiring operation across −40 °C to 85 °C and the industrial refresh cycle option (4096 cycles/32 ms).

Unique Advantages

• Flexible burst configuration: Programmable burst lengths and selectable linear/interleaved burst types let designers optimize transfer patterns for workload requirements.
• Multi‑bank pipelining: Four internal banks and an internal pipelined architecture increase parallelism and improve effective memory throughput.
• Byte‑level control: Individual byte masking (DQM0–DQM3) enables partial writes and finer data management within 32‑bit words.
• Temperature and refresh options: Industrial refresh timing option and −40 °C to 85 °C operating range support higher‑temperature and industrial applications.
• Standard 3.3 V supply: Single +3.3 V ±0.3 V power supply simplifies system power design.
• Compact BGA package: 90‑ball LF‑BGA (8×13) with 0.8 mm pitch provides a space‑efficient mounting solution.

Why Choose IS42S32800B-7BLI?

The IS42S32800B-7BLI combines a quad‑bank SDRAM architecture with programmable burst modes, selectable CAS latency, and byte‑level control to deliver a configurable 256‑Mbit memory building block suited to designs that demand controllable throughput and parallel memory access. Its support for auto/self refresh, industrial refresh timing, and a −40 °C to 85 °C operating range make it appropriate for systems where thermal range and refresh flexibility matter.

This device is a practical choice for engineers specifying synchronous DRAM where compact BGA packaging, a standard 3.3 V supply, and configurable performance/timing options are required to match system bandwidth and timing needs.

If you would like pricing, availability, or a formal quote for IS42S32800B-7BLI, please request a quote or submit an inquiry to our sales team to discuss lead times and volume options.