IS42S32800B-7BI

The IS42S32800B-7BI is a 256‑Mbit synchronous DRAM (SDRAM) organized for parallel interface operation. It implements a pipelined, fully synchronous architecture with multiple internal banks to support burst access and high memory bandwidth workloads.

Targeted at systems that require high-throughput volatile memory, the device provides programmable burst lengths, selectable CAS latencies, and both auto and self‑refresh modes to balance performance and system-level control.

Key Features

• Memory Architecture 256‑Mbit DRAM organized as 2M × 32 × 4 banks (per datasheet) and also listed as 8M × 32 organization, supporting concurrent bank operation for improved throughput.
• Clock and Timing Clock rate options of 166 MHz and 143 MHz (per datasheet) with an access time of 5.5 ns and selectable CAS latency of 2 or 3.
• Burst and Mode Control Programmable burst lengths of 1, 2, 4, 8 or full page, with interleaved or linear burst types and burst‑read/single‑write support; programmable mode register for system optimization.
• Refresh and Power Modes Auto Refresh and Self Refresh supported. Standard refresh: 4096 cycles/64 ms; industrial‑grade option: 4096 cycles/32 ms (per datasheet).
• Byte Masking and I/O Individual byte control via DQM0–DQM3 and LVTTL input/output interface.
• Power Supply Single +3.3 V nominal supply with operating range 3.0 V to 3.6 V.
• Package and Mechanical 90‑ball LF‑BGA (8 × 13) package with 0.8 mm ball pitch; package option includes Pb‑free variant (per datasheet).
• Operating Range Specified operating temperature range from −40 °C to 85 °C (TA).

Typical Applications

• High‑Bandwidth Embedded Systems Used where burst transfers and pipelined synchronous access improve throughput for memory‑intensive tasks.
• Industrial Control and Instrumentation Operating temperature range and industrial refresh timing options support use in harsher environments.
• Synchronous Memory Subsystems Acts as parallel SDRAM in systems that require programmable burst and CAS modes to match system timing requirements.

Unique Advantages

• Configurable Performance: Selectable CAS latency (2 or 3) and programmable burst lengths let designers tune latency and throughput to match system needs.
• Concurrent Bank Architecture: Four internal banks enable overlapping operations to increase effective memory bandwidth.
• Synchronous Pipelined Design: Fully synchronous operation with internal pipelining supports predictable, clocked data transfers for system integration.
• Industrial‑Grade Options: Refresh timing and specified −40 °C to 85 °C operating range make the device suitable for temperature‑sensitive deployments.
• Compact BGA Packaging: 90‑ball LF‑BGA (8×13) provides a compact footprint for space‑constrained board designs; Pb‑free package option available.
• Byte‑Level Control: DQM0–DQM3 individual byte masking enables finer control over write masking and I/O handling.

Why Choose IS42S32800B-7BI?

The IS42S32800B-7BI combines a synchronous, pipelined SDRAM architecture with programmable timing and burst features to deliver a flexible 256‑Mbit memory option for designs that need predictable, high‑throughput parallel memory. Its four‑bank organization and selectable CAS/burst settings allow designers to optimize performance for a range of synchronous systems.

This device is suitable for engineers designing embedded and industrial systems that require a compact LF‑BGA package, configurable timing, and reliable refresh options across a wide operating temperature range.

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