IS42S32800D-6BI-TR

The IS42S32800D-6BI-TR is a 256 Mbit synchronous DRAM organized as 8M × 32 with a quad-bank architecture and pipeline design for high-speed data transfer. It implements a fully synchronous, parallel interface with LVTTL-compatible signals and is offered in a 90-ball TF‑BGA (8×13) package.

This device is suited to systems that require synchronous burst access, programmable burst control and flexible timing options, providing designers with configurable CAS latency, refresh modes and high clock-rate operation up to 166 MHz.

Key Features

• Memory Architecture  256 Mbit DRAM organized as 8M × 32 (2M × 32 × 4 banks) with internal bank interleaving to hide row access and precharge times.
• Synchronous, High-Speed Operation  Fully synchronous design with clock-referenced inputs and outputs; supports clock frequencies up to 166 MHz (CAS Latency = 3) and access time as low as 5.4 ns.
• Burst and Addressing Flexibility  Programmable burst lengths (1, 2, 4, 8, full-page) and burst sequences (sequential/interleave); random column address changes every clock cycle during burst access.
• Programmable Timing  Selectable CAS latency of 2 or 3 clocks to match system timing requirements.
• Refresh and Power Modes  Supports Auto Refresh and Self Refresh with refresh options (4K cycles per 64 ms or 16 ms depending on grade) plus power-down capability.
• Interface and Voltage  LVTTL-compatible interface; single power supply 3.3 V ±0.3 V (specified supply range 3.0 V to 3.6 V).
• Package and Temperature  90‑TFBGA (8×13) package; operating temperature range −40 °C to +85 °C (TA) is provided in the product specification.

Typical Applications

• High-speed buffering and system memory  Use where synchronous burst transfers and predictable latency are required to support memory buffering and intermediate data storage.
• Burst-access data paths  Applications that exploit programmable burst lengths and interleaved bank operation to sustain sequential and interleaved data streams.
• Embedded systems requiring compact DRAM  Systems that benefit from a small TF‑BGA footprint combined with synchronous DRAM performance and selectable timing.

Unique Advantages

• High-transfer-rate operation: Supports clock frequencies up to 166 MHz and CAS latency options to meet varying performance targets.
• Flexible burst control: Programmable burst length and sequence let designers tailor transfers for sequential or interleaved access patterns.
• Bank interleaving and pipeline architecture: Internal bank structure and pipeline design help hide precharge and row access overhead for sustained throughput.
• Robust refresh and low-power modes: Auto and self-refresh modes plus multiple refresh timing options provide power-management flexibility.
• Compact board footprint: 90‑ball TF‑BGA (8×13) package reduces PCB area for space-constrained designs.
• Industrial temperature support: Specified to operate from −40 °C to +85 °C (TA) for temperature-critical applications.

Why Choose IS42S32800D-6BI-TR?

The IS42S32800D-6BI-TR delivers a balance of high-speed synchronous DRAM performance, configurable burst and timing features, and a compact TF‑BGA package for designs that require predictable latency and sustained data transfer. Its quad-bank architecture, programmable CAS latency and refresh options make it adaptable to a range of system timing and power-management needs.

This device is well suited for engineers designing systems that need synchronous burst capability, flexible timing configuration and a small footprint while operating from a standard 3.3 V supply across an industrial temperature range.

Request a quote or contact sales to obtain pricing, availability and lead-time information for the IS42S32800D-6BI-TR.