IS42S32800D-6BLI-TR

The IS42S32800D-6BLI-TR is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with an internal quad-bank architecture (2M × 32 × 4 banks). It implements a fully synchronous, pipelined design with registered inputs and outputs referenced to the rising edge of the clock, delivering high-speed, predictable memory access for systems using a parallel memory interface.

Targeted at designs requiring 3.3V memory operation and compact BGA packaging, the device provides programmable burst modes, selectable CAS latency, and power-saving refresh options to balance throughput and power consumption in embedded and system-level memory subsystems.

Key Features

• Memory Core  256Mbit SDRAM organized as 8M × 32 (2M × 32 × 4 banks) for parallel 32-bit data transfers.
• Performance  Supports a clock frequency up to 166 MHz (–6 grade) with programmable CAS latency (2, 3 clocks) and an access time of 5.4 ns (CAS Latency = 3).
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) for flexible block transfers.
• Refresh and Power Management  Auto Refresh and Self Refresh modes with 4,096 refresh cycles; refresh intervals vary by grade (16 ms for A2, 64 ms for Commercial/Industrial/A1). Includes a power-saving power-down mode.
• Interface  Fully synchronous LVTTL-compatible interface with random column address every clock cycle and burst read/write capability, using a parallel memory interface.
• Voltage and Timing  Single power supply: 3.3V ±0.3V (3.0V–3.6V). Timing parameters documented for –6 speed grade (166 MHz / CL=3).
• Packaging and Temperature  90-ball TF‑BGA (8 × 13) package; specified operating temperature range −40°C to +85°C (TA) for the listed part.

Typical Applications

• High-speed memory subsystems  Use as a parallel SDRAM memory device where predictable synchronous access and burst transfers are required.
• Embedded system memory  Integration in 3.3V memory architectures that require a 256Mbit SDRAM with programmable burst and CAS latency options.
• Systems requiring compact BGA memory  Applications that need a 90-TFBGA package footprint with quad-bank SDRAM organization for board-level memory expansion.

Unique Advantages

• High-throughput synchronous design: The pipelined SDRAM architecture and 166 MHz clock support fast, clock-referenced data transfers.
• Flexible burst control: Programmable burst lengths and selectable burst sequencing (sequential/interleave) simplify block data movement and memory controller tuning.
• Selectable latency and timing: Programmable CAS latency (2 or 3) and documented access times (5.4 ns at CL=3 for –6) allow designers to trade latency and frequency.
• Robust refresh options: Auto Refresh and Self Refresh modes with grade-specific refresh intervals (4,096 cycles per 16 ms or 64 ms) enable power/refresh optimization.
• Standard 3.3V supply compatibility: Operates at 3.3V ±0.3V (3.0–3.6V), matching common memory system power rails.
• Compact BGA package: 90-TFBGA (8×13) ball configuration reduces board footprint while providing a parallel 32-bit data interface.

Why Choose IS42S32800D-6BLI-TR?

The IS42S32800D-6BLI-TR delivers a synchronous, quad-bank 256Mbit SDRAM solution with documented timing for the –6 speed grade, providing designers with deterministic, high-speed memory access and configurable burst behavior. Its support for programmable CAS latency, Auto/Self Refresh, and power-down modes gives system designers tools to balance performance and power.

This device is suited for designs that require a 3.3V SDRAM in a compact 90-TFBGA package and need predictable, clock-referenced operation. The combination of timing detail, refresh options, and packaging makes it appropriate for embedded and system memory subsystems where integration and consistent behavior are priorities.

Request a quote or submit an inquiry for pricing and availability to discuss using the IS42S32800D-6BLI-TR in your design.