IS42S32800D-6TLI

The IS42S32800D-6TLI is a 256Mbit synchronous DRAM organized as 8M × 32 with an internal quad-bank architecture and a parallel memory interface. It implements a fully synchronous, pipelined design with all signals referenced to the rising edge of the clock to support high-speed burst transfers in 3.3V memory systems.

This device is suited for systems requiring low-latency, high-throughput volatile storage in a compact 86-pin TSOP-II package and supports commercial and industrial operating ranges.

Key Features

• Memory Core  The device is 256Mbit SDRAM organized as 8M × 32 (2M × 32 × 4 banks) to provide wide, parallel data paths and internal bank interleaving.
• Synchronous, High-Speed Interface  Fully synchronous operation with a clock frequency up to 166 MHz (‑6 speed grade) and LVTTL-compatible I/O referencing the positive clock edge.
• Low Access Time  Access time from clock of 5.4 ns at CAS Latency = 3 (‑6 grade), enabling tight read latency for time-sensitive bursts.
• Programmable Timing & Burst Control  Programmable CAS latency (2 or 3 clocks), selectable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave) for flexible data-transfer patterns.
• Power  Single power supply operation at 3.3V ±0.3V (3.0–3.6V) for standard 3.3V memory systems.
• Refresh & Power Management  Auto Refresh and Self Refresh modes with 4096 refresh cycles; refresh interval options include 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade).
• Banking & Throughput  Internal bank structure and bank interleaving hide row access/precharge latency to improve effective throughput during burst operations.
• Package & Temperature  Available in an 86-pin TSOP-II (0.400" / 10.16 mm width) package with an operating temperature range of −40°C to +85°C (TA) for industrial applications.

Typical Applications

• Embedded memory subsystems  Acts as parallel SDRAM storage for embedded platforms that require synchronous burst reads/writes and configurable latency.
• Industrial equipment  Suitable for industrial designs that need 3.3V memory with extended temperature support (−40°C to +85°C TA).
• Buffered or burst-oriented systems  Useful in systems that leverage burst transfers and bank interleaving to maximize sustained data throughput.

Unique Advantages

• High-frequency operation: 166 MHz clock support (‑6 grade) and 5.4 ns access time at CL=3 reduce memory latency for time-critical transfers.
• Flexible burst and timing control: Programmable burst length, burst sequence and CAS latency let designers tune transfers to system access patterns.
• Quad-bank architecture: Internal banking and bank interleaving hide precharge/row access delays to improve effective bandwidth during consecutive bursts.
• Single 3.3V supply: Operates over a 3.0–3.6V range (3.3V ±0.3V) simplifying power-rail design in standard 3.3V memory systems.
• Industrial temperature capability: Rated for −40°C to +85°C (TA), enabling deployment in a wide range of environmental conditions.
• Compact industry-standard package: 86-pin TSOP-II (10.16 mm width) eases PCB layout for space-conscious designs.

Why Choose IS42S32800D-6TLI?

The IS42S32800D-6TLI combines a synchronous, pipelined SDRAM core with programmable timing and burst control to deliver low-latency, high-throughput volatile storage in a compact 86-pin TSOP-II package. Its 2M × 32 × 4 bank organization and LVTTL interface make it suitable for designs that require predictable timing and flexible transfer modes on a standard 3.3V supply.

This device is well suited to engineers building embedded or industrial systems that need configurable latency, burst performance, and extended operating temperatures, providing a straightforward memory building block with established ISSI documentation and timing specifications.

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