IS42S32800D-75EBI

The IS42S32800D-75EBI is a 256Mbit synchronous DRAM organized as 8M × 32 with a parallel memory interface. Built around a quad-bank pipeline architecture, the device provides fully synchronous operation with registered inputs and outputs referenced to the rising edge of the clock.

This device targets systems that require high-speed, low-latency parallel DRAM with programmable burst and latency options, and supports operation across a wide voltage range and extended ambient temperatures for industrial applications.

Key Features

• Memory Core 256 Mbit density organized as 8M × 32 with internal quad-bank architecture (2M × 32 × 4 banks) for bank interleaving and hidden row access/precharge.
• SDRAM Operation Fully synchronous DRAM with LVTTL-compatible interface, programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave).
• Timing & Performance Designed for high-speed operation with a 133 MHz clock option and access time as low as 5.5 ns (for CL=2 at -75E grade); supports programmable CAS latency (2, 3 clocks).
• Refresh & Power Modes Auto Refresh and Self Refresh support with 4,096 refresh cycles; refresh interval options provided in device grades (e.g., 4K/64 ms for commercial/industrial).
• Electrical Single power supply operation across 3.0 V to 3.6 V.
• Package & Mounting 90-ball TF‑BGA package (8 × 13) suitable for surface-mount assembly.
• Temperature Range Specified operating ambient from -40 °C to +85 °C (TA) for industrial temperature applications.

Typical Applications

• Embedded memory subsystems — Use as parallel SDRAM for systems requiring synchronous burst transfers and low-latency memory access.
• Industrial electronics — Supports extended ambient operation (-40 °C to +85 °C) for industrial control and instrumentation platforms.
• High-speed buffering — Suitable where programmable burst lengths, bank interleaving and pipeline architecture improve sustained data throughput.

Unique Advantages

• Quad-bank architecture: Internal bank structure enables bank interleaving and hides row access/precharge to improve effective throughput.
• Programmable burst and latency: Configurable burst lengths and CAS latency (2 or 3 clocks) let designers trade latency versus throughput for specific system needs.
• Low access time: Access time down to 5.5 ns (CL=2, -75E) delivers reduced read latency for time-sensitive applications.
• Wide voltage tolerance: Operates across 3.0 V to 3.6 V supply range for compatibility with 3.3 V memory systems.
• Industrial temperature rating: Specified for operation from -40 °C to +85 °C to meet many industrial deployment environments.
• Compact TF‑BGA package: 90-ball TF‑BGA (8×13) provides a compact surface-mount form factor for space-constrained designs.

Why Choose IS42S32800D-75EBI?

The IS42S32800D-75EBI combines synchronous pipeline architecture, programmable burst features and low access times in a 256Mbit parallel SDRAM. Its 2M × 32 × 4 bank organization and LVTTL interface support high-speed burst transfers while providing flexibility in latency and burst sequencing.

This device is well suited for designers needing a robust, industrial-temperature SDRAM component that operates from a single 3.0–3.6 V supply and comes in a space-efficient 90‑TFBGA package. It offers long-term value through configurable timing options and standard SDRAM features such as auto and self refresh.

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