IS42S32800D-75EBL-TR

The IS42S32800D-75EBL-TR is a 256Mbit synchronous DRAM device organized as 8M × 32 with a parallel LVTTL interface and quad-bank internal architecture. It implements a pipelined, fully synchronous design optimized for high-speed data transfer in 3.0–3.6V systems.

Targeted at commercial-temperature applications (0°C to 70°C), this 90‑ball TF‑BGA packaged memory supports programmable burst lengths and sequences, Auto Refresh and Self Refresh modes, making it suitable for systems that require deterministic, clocked DRAM operation and flexible burst access patterns.

Key Features

• Memory Configuration — 256 Mbit density organized as 8M × 32 (2M × 32 × 4 banks), providing a wide data path for parallel memory systems.
• Synchronous Pipeline Architecture — All inputs and outputs are registered to the rising edge of CLK for fully synchronous operation and predictable timing.
• Performance & Timing — Supports clock operation up to 133 MHz for the -75E grade with programmable CAS latency (2 or 3 clocks) and access time as low as 5.5 ns.
• Burst Control — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible block transfers and column-address generation during bursts.
• Refresh and Power Modes — Auto Refresh and Self Refresh supported; refresh rates include 4096 cycles per 16 ms (A2 grade) or 64 ms for commercial/A1/industrial grades as specified in device options.
• Electrical — Single power supply operation across 3.0 V to 3.6 V with LVTTL-compatible I/O signalling.
• Package and Temperature — 90‑TFBGA (8 × 13) ball array in a commercial temperature range of 0°C to +70°C (TA).

Typical Applications

• Embedded memory subsystems — Used as a parallel SDRAM component where a 256 Mbit synchronous memory with burst capability is required.
• High-speed data buffering — Suitable for systems that need pipelined, clock-referenced reads and writes with programmable burst lengths and sequences.
• 3.3V LVTTL-based platforms — Fits designs operating within the 3.0–3.6 V supply window with LVTTL-compatible signaling.

Unique Advantages

• Quad-bank organization: Enables internal bank interleaving to hide row-access and precharge times, improving sustained throughput for burst transfers.
• Flexible bursting: Programmable burst lengths and sequential/interleave modes let designers match memory transfers to system access patterns.
• Synchronous, edge‑registered I/O: Deterministic timing referenced to the clock simplifies timing closure in clocked memory subsystems.
• Multiple refresh modes: Auto Refresh and Self Refresh with specified refresh counts provide selectable power and data-retention behavior for system needs.
• Standard TF‑BGA footprint: 90‑ball (8 × 13) package offers a compact surface-mount solution for board-level memory integration.

Why Choose IS42S32800D-75EBL-TR?

The IS42S32800D-75EBL-TR couples a 256 Mbit synchronous DRAM architecture with programmable burst control, selectable CAS latency, and Auto/Self Refresh features to deliver predictable, clocked memory performance for commercial-temperature designs. Its 8M × 32 organization and 90‑TFBGA package make it a practical choice for parallel memory subsystems operating at standard 3.3V supply levels.

This device is suitable for engineers and procurement teams specifying a documented, manufacturer-backed SDRAM solution from ISSI for systems requiring synchronous, burst-capable parallel memory with defined timing parameters and refresh behaviors.

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