IS42S32800D-75ETL

The IS42S32800D-75ETL is a 256Mbit synchronous DRAM organized as 8M × 32 (2M × 32 × 4 banks) that implements a pipeline architecture for high-speed data transfer. All signals are referenced to the rising edge of the clock and the device provides parallel memory interfacing with programmable burst and CAS options.

Designed for commercial temperature systems, the device operates from 3.0 V to 3.6 V and is offered in an 86‑pin TSOP‑II package (0.400", 10.16 mm width). Key performance points include a 133 MHz clock frequency (CAS latency = 2) and a 5.5 ns access time.

Key Features

• Core / Memory Organization  256 Mbit SDRAM configured as 8M × 32 (internally 2M × 32 × 4 banks) to support bank interleaving and pipeline operation.
• Performance  133 MHz clock frequency (–75E timing) with 5.5 ns access time (CAS latency = 2), enabling high-rate burst transfers.
• Programmable Timing & Burst  Programmable CAS latency (2 or 3 clocks) and programmable burst length (1, 2, 4, 8, full page) with sequential or interleave burst sequences.
• Interface  Fully synchronous operation with LVTTL-compatible inputs and all signals referenced to the positive clock edge, supporting random column address every clock cycle.
• Power  Single power supply operation specified at 3.3 V ±0.3 V (data sheet range reflected as 3.0 V to 3.6 V).
• Refresh & Power-Save  Supports Auto Refresh, Self Refresh, and power-down modes; refresh implementations include 4096 refresh cycles per refresh interval depending on grade.
• Package & Temperature  Available in 86‑pin TSOP‑II (0.400", 10.16 mm width) and specified for commercial temperature operation from 0°C to 70°C (TA).

Typical Applications

• High-speed data buffering  Use where synchronous burst transfers and low access time are required for temporary data storage and buffering.
• Embedded memory expansion  Adds parallel SDRAM capacity to embedded systems requiring a 256 Mbit memory organized as 8M × 32.
• Streaming and burst-oriented systems  Suitable for systems that leverage programmable burst lengths and bank interleaving to sustain high-throughput transfers.

Unique Advantages

• Synchronous pipeline architecture: All signals registered on the positive clock edge to simplify timing with synchronous system designs.
• Flexible timing and burst control: Programmable CAS latency and burst length support design tuning between latency and throughput requirements.
• Quad-bank organization: Internal four-bank structure enables bank interleaving to hide precharge times and improve effective bandwidth.
• Comprehensive refresh and low-power modes: Auto Refresh and Self Refresh modes reduce system-level refresh management and support power savings.
• Standard commercial package: 86‑pin TSOP‑II footprint (10.16 mm width) for compact board-level integration in commercial-temperature applications.

Why Choose IS42S32800D-75ETL?

The IS42S32800D-75ETL provides a synchronous, programmable 256 Mbit DRAM solution that balances low access time and flexible burst operation for designs that require predictable, clock‑edge referenced memory behavior. Its 2M × 32 × 4-bank organization and programmable CAS/burst settings allow tuning for a range of throughput and latency targets.

This device is well suited for commercial-temperature systems needing a compact TSOP‑II packaged SDRAM operating at a 3.0 V–3.6 V supply. The combination of synchronous interface, refresh capabilities, and standard packaging supports reliable integration into embedded and burst-oriented memory subsystems.

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