IS42S32800D-75ETL-TR

The IS42S32800D-75ETL-TR is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with a quad-bank internal architecture. It implements a fully synchronous, pipeline architecture with all signals referenced to the rising edge of the clock, delivering predictable, clocked memory operation for 3.3V memory systems.

Designed for commercial-temperature applications (0°C to 70°C), this parallel-interface SDRAM provides programmable burst lengths and CAS latency options, suited for systems that require deterministic, high-speed DRAM operation in an 86‑pin TSOP‑II package.

Key Features

• Memory Core 256 Mbit capacity, organized as 8M × 32 and internally configured as 2M × 32 × 4 banks for bank interleaving and hidden precharge.
• Synchronous Pipeline Architecture Fully synchronous SDRAM with all inputs and outputs referenced to the clock rising edge; supports pipeline data transfer and randomized column addresses during burst access.
• Performance Clock frequency up to 133 MHz with access time as low as 5.5 ns (CL = 2 for the -75 device); programmable CAS latency (2, 3 clocks).
• Burst and Access Control Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave), with burst termination via burst stop or auto precharge.
• Refresh and Power Modes Auto Refresh (CBR) and Self Refresh support; refresh counts per datasheet options (4K cycles) with specified refresh intervals.
• Interface and Logic Levels LVTTL-compatible I/O for control and data signals; parallel memory interface for conventional SDRAM bus integration.
• Power Single power supply operation at 3.3 V (specified 3.0 V to 3.6 V).
• Package and Temperature 86‑pin TSOP‑II (10.16 mm width) package; commercial operating temperature range 0°C to 70°C (TA).

Typical Applications

• System Memory Subsystems Use as main or auxiliary DRAM in 3.3V synchronous memory systems requiring 256Mbit density and predictable clocked operation.
• Buffer and Burst Storage High-speed burst reads/writes and programmable burst sequencing make it suitable for buffer memory in parallel-interface data paths.
• Memory Expansion Modules Integration into memory modules or board-level expansions where an 86‑pin TSOP‑II footprint and commercial temperature rating are required.

Unique Advantages

• Quad‑Bank Architecture: Enables bank interleaving and hidden row precharge to improve effective throughput during burst operations.
• Flexible Burst Control: Programmable burst lengths and sequence options provide adaptable transfer patterns for varied data throughput needs.
• Deterministic Synchronous Operation: All signals registered to the clock edge support predictable timing and easy timing analysis in synchronous systems.
• Commercial Temperature Support: Rated for 0°C to 70°C for designs targeting standard commercial environments.
• Industry‑Standard Voltage: 3.3 V single-supply operation (3.0 V–3.6 V range) aligns with common SDRAM power rails.
• Compact TSOP‑II Package: 86‑pin TSOP‑II package (10.16 mm width) for board-level integration where space and conventional SO‑type footprints are used.

Why Choose IC DRAM 256MBIT PAR 86TSOP II?

The IS42S32800D-75ETL-TR delivers a synchronous, pipeline SDRAM solution with the performance and control needed for predictable, clocked memory designs. Its 8M × 32 organization, quad-bank architecture, and programmable burst/CAS options provide design flexibility for systems that require high-rate burst transfers and predictable timing.

This device is aimed at designers building 3.3V synchronous memory systems on a commercial temperature platform who need a 256Mbit parallel SDRAM in an 86‑pin TSOP‑II package. Its combination of synchronous operation, refresh modes, and LVTTL interface supports integration into established memory subsystems with standard power and timing requirements.

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