IS42S32800D-75ETLI-TR

The IS42S32800D-75ETLI-TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 8M × 32 (2M × 32 × 4 banks). It implements a fully synchronous, pipeline architecture with all signals referenced to the rising edge of the clock for predictable high-speed operation.

Designed for systems that require parallel SDRAM buffering and burst access, the device offers programmable burst lengths and sequence options, LVTTL I/O compatibility, and a compact 86‑pin TSOP‑II package with a 10.16 mm width.

Key Features

• Core / Memory Architecture Quad‑bank synchronous DRAM organized as 2M × 32 × 4 banks (8M × 32 total, 256 Mbit) to support interleaved bank operation and pipelined access.
• Performance Supports a clock frequency up to 133 MHz for the -75E option with CAS‑latency 2 and an access time of 5.5 ns (CAS‑latency = 2).
• Programmable Burst and CAS Options Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential or interleave). CAS latency selectable between 2 and 3 clocks.
• Refresh and Power Modes Auto‑refresh and self‑refresh supported; refresh cycles specified as 4096 counts with timing options of 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade) per datasheet options.
• Interface and Signaling LVTTL‑compatible inputs/outputs and parallel memory interface with random column address capability every clock cycle for flexible burst access.
• Power Single 3.3 V supply nominal (specified supply range 3.0 V to 3.6 V / 3.3 V ±0.3 V in datasheet).
• Package and Mounting 86‑pin TSOP‑II (86‑TFSOP) package, 0.400" (10.16 mm) width, suitable for surface‑mount applications.
• Operating Temperature Specified operating ambient range: −40 °C to +85 °C (TA).

Typical Applications

• High‑speed buffering Use in systems requiring synchronous burst transfers and low access latency for temporary data storage and buffering.
• Memory subsystems Integration into parallel SDRAM memory banks where programmable burst length and interleaved bank access improve throughput.
• Embedded processing platforms Suitable for embedded designs that require a compact 86‑pin TSOP‑II packaged SDRAM with LVTTL interface and standard 3.3 V operation.

Unique Advantages

• Flexible burst control: Programmable burst lengths and sequence modes enable tailored transfer patterns to match system data flow.
• Low access latency: 5.5 ns access time at the -75E option (CAS‑latency = 2) supports responsive read operations in time‑sensitive designs.
• Interleaved bank architecture: Quad‑bank internal organization allows hidden row access/precharge and improved effective throughput during burst operations.
• Standard voltage and signaling: 3.3 V single‑supply operation with LVTTL I/O simplifies integration into common memory subsystems.
• Compact footprint: 86‑TSOP II package provides high density in a small surface‑mount form factor for space‑constrained PCBs.

Why Choose IS42S32800D-75ETLI-TR?

The IS42S32800D-75ETLI-TR delivers a compact, fully synchronous 256 Mbit SDRAM solution with programmable burst and CAS settings, LVTTL I/O, and a quad‑bank architecture that helps maintain high sustained data throughput. Its 3.3 V single‑supply operation and standard TSOP‑II footprint make it suitable for integration into a wide range of parallel memory subsystems.

This device is well suited to designers and procurement teams seeking a verifiable, specification‑driven DRAM component for embedded platforms and high‑speed buffering applications where predictable timing, selectable latency, and compact packaging are required.

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