IS42S32800D-75ETLI

The IS42S32800D-75ETLI is a 256 Mbit synchronous DRAM organized as 8M × 32 with an internal quad-bank architecture (2M × 32 × 4 banks). It is a fully synchronous, parallel SDRAM operating from a 3.0 V to 3.6 V supply and designed for high-speed, clocked memory applications.

Key characteristics include a 133 MHz clock option with 5.5 ns access time (–75E), programmable CAS latency and burst modes, and refresh/power-saving modes. The device is offered in a 86‑TSOP II package and supports an operating temperature range of –40°C to +85°C (TA).

Key Features

• Memory Architecture 256 Mbit SDRAM configured as 8M × 32 (2M × 32 × 4 banks) providing quad-bank internal organization for concurrent bank operations.
• Clock & Timing –75E timing: 133 MHz clock option with 5.5 ns access time; programmable CAS latency (2 or 3 clocks) for timing flexibility.
• Burst & Data Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleaved burst sequences; supports burst termination and autoprecharge.
• Interface Parallel LVTTL-compatible interface with synchronous operation—all signals registered on the rising clock edge.
• Power Supply Single-supply operation at 3.0 V to 3.6 V (nominal 3.3 V) with power-down and self-refresh modes for power management.
• Refresh & Reliability Modes Auto Refresh (CBR) and Self Refresh supported; 4096 refresh cycles per refresh interval (options: 16 ms for A2 grade or 64 ms for Commercial/Industrial/A1 grades).
• Package & Temperature 86‑TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) package; specified operating temperature range –40°C to +85°C (TA).

Unique Advantages

• Synchronous operation for consistent timing: All inputs and outputs are referenced to the positive clock edge, enabling predictable, clocked data transfers.
• Quad‑bank internal architecture: Four internal banks and internal bank interleaving hide row access/precharge latency and enable higher effective throughput during burst operations.
• Flexible burst and latency control: Programmable burst lengths, burst sequencing and CAS latency options allow tuning for different read/write patterns.
• Comprehensive refresh and low‑power modes: Auto and self refresh with defined refresh cycle options help maintain data integrity while supporting power-saving operation.
• Industry-standard package and temperature support: 86‑pin TSOP‑II package and –40°C to +85°C rating support compact board integration and extended temperature operation.

Why Choose IC DRAM 256MBIT PAR 86TSOP II?

The IS42S32800D-75ETLI delivers a 256 Mbit synchronous DRAM building block with configurable timing and burst behavior, a 133 MHz clock option with 5.5 ns access, and robust refresh and power modes. Its quad-bank organization and LVTTL synchronous interface provide designers with predictable timing and flexible data sequencing, while the 86‑TSOP II package and –40°C to +85°C operating range support compact, temperature‑tolerant designs.

Manufactured by Integrated Silicon Solution, Inc., the device is documented with comprehensive timing and operational modes that help engineers integrate a high-speed parallel SDRAM into systems requiring programmable latency, burst control and standard 3.3 V supply operation.

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