IS42S32800D-7BI

The IS42S32800D-7BI is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with a quad-bank architecture and pipeline design for high-speed, synchronous data transfer. It implements a parallel memory interface with LVTTL-compatible I/O and is optimized for systems that require a compact 90‑TFBGA package and a 3.3V-class power supply.

This device targets designs requiring programmable burst operation, selectable CAS latency, and robust refresh/power modes, providing a balance of performance and predictable timing for commercial and industrial temperature applications.

Key Features

• Core / Architecture  256Mbit SDRAM organized as 2M × 32 × 4 banks (8M × 32) with internal bank interleaving and pipeline architecture to support high-speed synchronous operation.
• Performance  Clock frequency up to 143 MHz (device -7 speed grade) with an access time from clock of 5.4 ns at CAS latency = 3.
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page), sequential/interleave burst sequences, and programmable CAS latency options (2 or 3 clocks) for flexible data transfer patterns.
• Refresh and Power Management  Auto Refresh and Self Refresh support; refresh intervals documented for commercial/industrial and A‑grade options (4K refresh cycles per specified interval).
• Interface and Signaling  Parallel memory interface with LVTTL-compatible I/O and support for random column address every clock cycle.
• Power  Single power supply operation around 3.3 V (specified 3.0 V to 3.6 V range; datasheet specifies 3.3 V ± 0.3 V).
• Package and Temperature  Supplied in a 90‑TFBGA (90‑ball, 8×13) package; specified operating temperature range -40 °C to +85 °C (TA) for the listed device variant.

Typical Applications

• Embedded systems  Acts as synchronous system memory where predictable timing, burst transfers, and selectable CAS latency are required.
• Networking and communications equipment  Supports high-speed burst read/write patterns and random column access for packet buffering and streaming data tasks.
• Industrial control  Operates over -40 °C to +85 °C, suitable for industrial-grade designs that require SDRAM with self‑refresh and auto‑refresh capabilities.
• Consumer electronics  Provides a compact 90‑TFBGA footprint and configurable burst modes for compact board designs with synchronous memory needs.

Unique Advantages

• High-speed synchronous operation: 143 MHz clock frequency (‑7 speed grade) and pipeline architecture deliver tight timing and predictable access performance.
• Flexible data transfer modes: Programmable burst lengths and sequence plus programmable CAS latency allow tuning for different throughput and latency requirements.
• Robust refresh and power modes: Auto Refresh and Self Refresh reduce system overhead for refresh management and support power saving.
• Standard 90‑TFBGA packaging: Compact 90-ball (8×13) TF‑BGA package enables high-density board integration while maintaining ball-grid reliability.
• 3.3V-class compatibility: Operates within a 3.0 V to 3.6 V supply window (datasheet specifies 3.3 V ±0.3 V), matching common system power rails.
• Industrial temperature capability: Device variant specified for -40 °C to +85 °C operation, supporting temperature‑sensitive deployments.

Why Choose IS42S32800D-7BI?

The IS42S32800D-7BI provides a compact, configurable 256Mbit SDRAM solution from Integrated Silicon Solution, Inc., combining a synchronous pipeline architecture with programmable burst and latency options. Its LVTTL-compatible parallel interface, 3.3V-class supply compatibility, and documented timing (5.4 ns access at CL=3) make it a practical choice for designs that need deterministic SDRAM behavior in a space-efficient 90‑TFBGA package.

This device is well suited to engineers designing commercial or industrial systems that require scalable memory bandwidth, selectable latency/burst behavior, and reliable refresh/power modes. Its documented operating range and package option help simplify BOM decisions for long‑lifecycle hardware projects.

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