IS42S32800D-7BL-TR

The IS42S32800D-7BL-TR is a 256Mbit synchronous DRAM organized as 8M × 32 (2M × 32 × 4 banks) in a 90-TFBGA (8×13) package. It is a fully synchronous, pipeline-architecture SDRAM designed for 3.3V memory systems and referenced to the rising edge of the clock.

Designed for systems that require high-speed, burst-capable parallel memory, this device provides programmable burst lengths and sequences, internal banking for hidden row access/precharge, and power-saving modes such as self-refresh and power-down.

Key Features

• Core Memory Architecture — 8M × 32 organization (2M × 32 × 4 banks) providing 256Mbit of volatile SDRAM storage with internal banking to hide row access and precharge.
• Performance — Supports a 143 MHz clock frequency (‑7 speed grade) with an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst and CAS — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave), with selectable CAS latency of 2 or 3 clocks.
• Refresh and Power Management — Auto Refresh and Self Refresh support; refresh options include 4096 cycles per 16 ms (A2 grade) or per 64 ms for commercial/A1 grades. Includes power-down capability.
• Interface and Signaling — LVTTL-compatible inputs and outputs with a parallel memory interface for synchronous burst read/write operations and random column address changes every clock cycle.
• Supply and Temperature — Single power supply: 3.3V (3.0V–3.6V tolerance) and commercial operating temperature range 0°C to +70°C.
• Package — 90-ball TF-BGA (8×13) supplier device package suitable for compact board-level integration.

Typical Applications

• Memory subsystems — Use as a 256Mbit synchronous DRAM component within 3.3V memory systems requiring pipelined, banked SDRAM architecture.
• Board-level embedded designs — Suitable for compact PCBs that accommodate a 90-TFBGA (8×13) package and operate in commercial temperature ranges (0°C–70°C).
• High-speed burst buffering — Appropriate where programmable burst lengths, interleave/sequential burst sequencing, and random column addressing per clock cycle are required for burst read/write operations.
• Low-power standby scenarios — Systems that leverage Self Refresh and power-down modes to reduce activity during idle periods.

Unique Advantages

• Quad-bank architecture: Internal 4-bank organization enables bank interleaving to hide precharge time and maintain continuous data flow during burst operations.
• Flexible burst control: Programmable burst lengths and sequences allow designers to match memory transfers to system data patterns and throughput requirements.
• Deterministic timing: Fully synchronous operation with LVTTL signaling and defined CAS latency options provides predictable timing for system integration.
• Standard 3.3V supply range: Operates with a single 3.3V supply (3.0V–3.6V), simplifying power-rail design for legacy and common memory systems.
• Compact BGA footprint: 90-TFBGA (8×13) packaging reduces board area while supporting high pin density for parallel memory interfaces.

Why Choose IC DRAM 256MBIT PAR 90TFBGA?

The IS42S32800D-7BL-TR provides a verified 256Mbit SDRAM solution with synchronous, banked architecture and programmable burst capabilities tailored for systems that require predictable, high-speed parallel memory. With a 143 MHz clock rating for the -7 speed grade, selectable CAS latency, and LVTTL-compatible interfacing, this device is suited to designs that need controlled timing and flexible burst behavior.

This part is appropriate for engineers specifying compact BGA-mounted SDRAM for commercial-temperature applications running from a standard 3.3V supply, offering self-refresh and auto-refresh options for power and retention strategies.

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