IS42S32800D-7TL-TR

The IS42S32800D-7TL-TR is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with internal quad-bank architecture. It implements a fully synchronous pipeline design with all signals referenced to the rising edge of the clock.

Designed for 3.3V memory systems that require a parallel LVTTL interface, the device targets applications requiring high-speed burst transfers, flexible latency and refresh control, and a standard 86‑TSOP II package for surface-mount assembly.

Key Features

• Memory Organization — 256Mbit SDRAM arranged as 8M × 32 (configured internally as 2M × 32 × 4 banks) to support bank interleaving and efficient row access.
• Performance — Clock frequency up to 143 MHz (‑7 speed grade) with an access time of 5.4 ns (CAS latency = 3). Programmable CAS latency options of 2 or 3 clocks.
• Synchronous Interface — Fully synchronous operation with LVTTL-compatible I/O; all inputs and outputs referenced to a positive clock edge for predictable timing.
• Burst and Addressing — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with random column address capability every clock cycle.
• Refresh and Power Modes — Auto Refresh (CBR), Self Refresh, and power-down support. Refresh options include 4K refresh cycles per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) per datasheet options.
• Power — Single power supply: 3.3V ± 0.3V (specified operating range 3.0V to 3.6V).
• Package & Temperature — Available in 86‑pin TSOP‑II (86‑TFSOP, 0.400" / 10.16 mm width) and specified commercial operating temperature 0°C to +70°C (TA).

Typical Applications

• 3.3V Memory Subsystems — Acts as system SDRAM in designs that require a 256Mbit parallel SDRAM with LVTTL interface and standard timing control.
• High-Speed Buffering — Suitable where burst read/write transfers and programmable CAS latency are used to tune throughput and latency.
• Embedded Platforms — Fits embedded/board-level designs requiring surface-mount 86‑TSOP II components and standard refresh/power management modes.

Unique Advantages

• Flexible Timing Configuration: Programmable CAS latency (2 or 3) and burst length/sequence options allow tuning for diverse timing and throughput requirements.
• Quad-Bank Architecture: Internal 4-bank organization supports bank interleaving to hide precharge time and improve effective throughput during burst operations.
• Standard Supply Compatibility: 3.3V ±0.3V single-supply operation (3.0–3.6V) simplifies integration into common 3.3V memory systems.
• Power and Refresh Modes: Auto Refresh, Self Refresh and power-down modes provide on-chip support for refresh management and power saving strategies.
• Surface-Mount Package: 86‑TSOP II (0.400" / 10.16 mm width) package supports density and assembly requirements for PCB-level designs.

Why Choose IS42S32800D-7TL-TR?

The IS42S32800D-7TL-TR delivers a compact, configurable 256Mbit SDRAM solution for 3.3V systems that require synchronous parallel memory with LVTTL I/O. Its programmable CAS latency, burst control, and quad-bank organization provide designers with timing and throughput flexibility while supporting standard refresh and power modes.

This device is suited to board-level and embedded designs that need a surface-mount 86‑TSOP II package and commercially specified operating range. The combination of standard supply tolerance, synchronous operation, and documented timing parameters makes it a practical choice for integrating 256Mbit SDRAM into existing 3.3V memory subsystems.

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