IS42S32800D-7TLI

The IS42S32800D-7TLI is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with an internal quad-bank architecture and a parallel memory interface. It is a high-speed, fully synchronous DRAM device designed for 3.3V systems and referenced to the rising edge of the clock.

Targeted at systems that require deterministic, burst-capable parallel memory, this device provides programmable burst lengths and CAS latency options, making it suitable for commercial and industrial environments where 3.3V supply operation and operation from -40°C to +85°C are required.

Key Features

• Core / Architecture  8M × 32 organization (2M × 32 × 4 banks) with internal bank structure to hide row access and precharge delays.
• Memory Capacity  256 Mbit DRAM in a parallel memory format.
• Clock & Timing  Supports a clock frequency of 143 MHz (‑7 speed grade); programmable CAS latency (2 or 3 clocks) with an access time of 5.4 ns at CAS latency = 3.
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination.
• Refresh & Power Management  Auto Refresh and Self Refresh modes; refresh rate examples include 4096 cycles per 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade).
• Interface & Logic Levels  LVTTL compatible I/O; fully synchronous interface with all inputs and outputs referenced to the positive clock edge.
• Supply Voltage  Single power supply operation at 3.3V ±0.3V (3.0V to 3.6V).
• Package & Temperature Range  86-pin TSOP-II (86-TFSOP, 0.400", 10.16 mm width) package; operating temperature range −40°C to +85°C (TA).

Typical Applications

• Embedded Systems  High-speed parallel SDRAM for 3.3V memory subsystems in embedded designs requiring deterministic burst access.
• Industrial Electronics  Memory solutions for industrial equipment that must operate across −40°C to +85°C.
• Networking & Communications  Buffer and packet memory applications that benefit from quad-bank architecture and fast burst transfers.
• High-Throughput Data Paths  Applications requiring wide data paths (32-bit) and programmable burst sequencing for sustained data movement.

Unique Advantages

• High-throughput parallel interface: 32-bit data width combined with up to 143 MHz clocking (‑7) enables substantial parallel data bandwidth.
• Flexible latency and burst control: Programmable CAS latency (2 or 3) and multiple burst length/sequence options let designers tune performance to application needs.
• Banked architecture for reduced cycle overhead: Quad-bank internal organization permits interleaving between banks to hide precharge time and improve effective throughput.
• Power and refresh management: Auto Refresh and Self Refresh modes simplify refresh handling and support system power-saving strategies.
• Industrial temperature support: Specified operation from −40°C to +85°C (TA) for use in temperature-challenging deployments.
• Standard TSOP-II footprint: 86-pin TSOP-II package (10.16 mm width) for compatibility with established board designs.

Why Choose IS42S32800D-7TLI?

The IS42S32800D-7TLI from Integrated Silicon Solution, Inc. offers a practical combination of capacity, predictable latency, and burst flexibility in a 3.3V synchronous DRAM. Its quad-bank organization, LVTTL synchronous interface, and programmable burst/CAS options make it well suited to designs that need parallel, high-throughput memory in commercial and industrial temperature ranges.

Engineers specifying this device benefit from clear timing options (including a 143 MHz speed grade and 5.4 ns access at CL=3), standard TSOP-II packaging, and integrated refresh/power features that reduce memory management complexity and help maintain robust long-term operation.

Request a quote or submit a procurement inquiry for the IS42S32800D-7TLI to receive pricing and lead-time information for your project.