IS42S32800G-6BL

The IS42S32800G-6BL is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with internal quad-bank architecture (2M × 32 × 4 banks). It provides a parallel memory interface with LVTTL-compatible signaling and is offered in a 90-ball TF-BGA (8×13) package for compact board-level integration.

Designed for systems requiring synchronous, high-rate data transfers at commercial temperature ranges, the device supports programmable burst lengths and CAS latencies to match a variety of timing and throughput requirements.

Key Features

• Core Architecture  The device is a fully synchronous DRAM with pipeline architecture; all inputs and outputs are referenced to the rising edge of the clock.
• Memory Organization  256 Mbit capacity arranged as 8M × 32 (internally 2M × 32 × 4 banks) to support multi-bank operations and random column access every clock cycle.
• Clocking and Timing  -6 speed grade operates at 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3); multiple clock grades (200, 166, 143 MHz) are offered across the family.
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page), programmable burst sequence (sequential/interleave), and CAS latency options (2, 3 clocks).
• Refresh and Self‑Refresh  Supports Auto Refresh (CBR) and Self Refresh; refresh cycles specified (e.g., 4096 refresh cycles per 16 ms for A2 grade or 64 ms for commercial/other grades) in datasheet options.
• Supply and Interface  Single power supply operation: 3.3 V ± 0.3 V (listed supply range 3.0 V–3.6 V); LVTTL-compatible interface with parallel memory bus.
• Package and Temperature  90-ball TF‑BGA (8×13) package; operating temperature (commercial) 0 °C to +70 °C (TA).

Typical Applications

• Embedded memory subsystems  Acts as synchronous main or buffer memory where parallel SDRAM is required for system-level data storage and retrieval.
• High-speed data buffering  Supports burst read/write operations and random column access every clock cycle for designs that need deterministic, clock-referenced transfers.
• Systems using 3.3 V memory interfaces  Suited to designs operating with a single 3.3 V supply (3.0–3.6 V) and LVTTL signaling.

Unique Advantages

• Synchronous pipeline architecture  All I/O referenced to the positive clock edge enables predictable timing and integration with synchronous system buses.
• Flexible performance grades  Available clock-frequency options (200, 166, 143 MHz) and selectable CAS latencies let designers choose the right balance of speed and timing for their application.
• Programmable burst control  Burst length and sequence programmability (including full‑page mode) provide flexibility for burst-oriented transfers and varied access patterns.
• Quad-bank organization  Internal bank architecture (4 banks) supports hidden row access/precharge and improves effective throughput in interleaved access scenarios.
• Standard 3.3 V single-supply operation  Designed for 3.3 V systems with a specified supply range (3.0–3.6 V), simplifying power-domain design in common memory subsystems.
• Compact TF‑BGA package  Offered in a 90-ball TF-BGA (8×13) package for board-level mounting where a ball-grid BGA footprint is required.

Why Choose IC DRAM 256MBIT PAR 90TFBGA?

The IS42S32800G-6BL positions itself as a straightforward 256 Mbit synchronous DRAM option for designs that require a parallel SDRAM interface with programmable timing and burst behavior. With selectable CAS latencies, burst modes, and a quad-bank internal structure, it supports a range of timing and throughput needs while operating from a single 3.3 V supply.

This device is suitable for developers and procurement focused on commercial-temperature embedded systems and memory subsystems that demand synchronous, clock-referenced DRAM behavior in a 90-ball TF‑BGA package. The documented timing grades and refresh options allow predictable integration for mid-density memory requirements.

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